EP 3555924 A1 20191023 - METHOD FOR PRODUCING A DEVICE COMPRISING A LAYER OF III-N MATERIAL WITH SURFACE DEFECTS
Title (en)
METHOD FOR PRODUCING A DEVICE COMPRISING A LAYER OF III-N MATERIAL WITH SURFACE DEFECTS
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER VORRICHTUNG MIT EINER SCHICHT AUS III-N-MATERIAL MIT OBERFLÄCHENDEFEKTEN
Title (fr)
PROCEDE DE FABRICATION D'UN DISPOSITIF COMPRENANT UNE COUCHE DE MATERIAU III-N AVEC DES DEFAUTS DE SURFACE
Publication
Application
Priority
- FR 1662492 A 20161215
- EP 2017082283 W 20171211
Abstract (en)
[origin: WO2018108840A1] The invention relates to a method for producing a device comprising at least one layer made of III-N semiconductor material having crystal-growth surface defects and a substrate, the method comprising: - depositing a barrier layer made of a second III-N material on the surface of a layer of a first III-N semiconductor material, said second III-N material having a larger gap between the valence band and the conduction band than the gap between the valence band and the conduction band of the first III-N material; - depositing at least two layers of different dielectric materials on the surface of said semiconductor material layer made of III-N material and filling said crystal-growth surface defects; - a "CMP" etching operation defining an assembly of materials; and - producing at least one contact at the surface of said assembly of materials. The device can be a transistor. The method can advantageously comprise a plurality of depositions of dielectric materials which can be SiN and SiO2.
IPC 8 full level
H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/34 (2006.01)
CPC (source: EP)
H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 29/34 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 21/31053 (2013.01); H01L 29/2003 (2013.01)
Citation (search report)
See references of WO 2018108840A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2018108840 A1 20180621; EP 3555924 A1 20191023; FR 3060837 A1 20180622; FR 3060837 B1 20190510
DOCDB simple family (application)
EP 2017082283 W 20171211; EP 17822597 A 20171211; FR 1662492 A 20161215