EP 3563405 A1 20191106 - HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
Title (en)
HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
Title (de)
ABLAGERUNG VON GRUPPE-III/V-MATERIALIEN MIT HOHER WACHSTUMSRATE
Title (fr)
DÉPÔT À VITESSE DE CROISSANCE ÉLEVÉE DE MATÉRIAUX DU GROUPE III/V
Publication
Application
Priority
- US 201715717694 A 20170927
- US 2018049869 W 20180907
Abstract (en)
[origin: WO2019067177A1] Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 µm/hr or greater, for example, about 40 µm/hr, about 50 µm/hr, about 55 µm/hr, about 60 µm/hr, about 70 µm/hr, about 80 µm/hr, and about 90-120 µm/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.
IPC 8 full level
H01L 21/20 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP KR)
C23C 16/301 (2013.01 - KR); C23C 16/52 (2013.01 - KR); H01L 21/02538 (2013.01 - EP); H01L 21/0254 (2013.01 - EP KR); H01L 21/02543 (2013.01 - EP); H01L 21/02546 (2013.01 - EP KR); H01L 21/02573 (2013.01 - KR); H01L 21/0262 (2013.01 - EP KR)
Citation (search report)
See references of WO 2019067177A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019067177 A1 20190404; CN 110582838 A 20191217; EP 3563405 A1 20191106; JP 2020535626 A 20201203; KR 20210088771 A 20210715
DOCDB simple family (application)
US 2018049869 W 20180907; CN 201880024678 A 20180907; EP 18779506 A 20180907; JP 2019541292 A 20180907; KR 20197022544 A 20180907