Global Patent Index - EP 3584836 B1

EP 3584836 B1 20211027 - LAYOUT DESIGN FOR FANOUT PATTERNS IN SELF-ALIGNED DOUBLE PATTERNING PROCESS

Title (en)

LAYOUT DESIGN FOR FANOUT PATTERNS IN SELF-ALIGNED DOUBLE PATTERNING PROCESS

Title (de)

LAYOUT-ENTWURF FÜR AUSFÄCHERUNGSMUSTER IN EINEM SELBSTAUSRICHTENDEN DOPPELSTRUKTURIERUNGSPROZESS

Title (fr)

CONCEPTION D'AGENCEMENT DE MOTIFS DE DÉPLOIEMENT PYRAMIDAL DANS UN PROCESSUS DE FORMATION DE MOTIFS DOUBLES AUTO-ALIGNÉS

Publication

EP 3584836 B1 20211027 (EN)

Application

EP 18180832 A 20180629

Priority

US 201816012608 A 20180619

Abstract (en)

[origin: EP3584836A1] A circuit structure comprises a plurality of first conducting lines extending in a first direction, the first conducting lines having a first pitch in a second direction orthogonal to the first direction; a plurality of linking lines extending in the second direction, the linking lines having a second pitch in the first direction, the second pitch being greater than the first pitch; and a plurality of connection structures connecting respective first conducting lines for current flow to respective linking lines, the connection structures each including a plurality of segments extending in the first direction, segments in the plurality of segments having a transition pitch in the second direction relative to adjacent segments in the plurality of segments greater than or equal to the first pitch, and less than the second pitch.

IPC 8 full level

H01L 27/105 (2006.01); G03F 1/00 (2012.01); G03F 7/20 (2006.01); H01L 21/033 (2006.01); H01L 23/528 (2006.01)

CPC (source: CN EP KR US)

G03F 1/00 (2013.01 - EP); G03F 7/70283 (2013.01 - EP); G03F 7/70466 (2013.01 - EP); G11C 5/063 (2013.01 - KR); H01L 21/0274 (2013.01 - KR); H01L 21/0335 (2013.01 - US); H01L 21/0337 (2013.01 - KR US); H01L 21/0338 (2013.01 - US); H01L 21/28132 (2013.01 - KR); H01L 21/76816 (2013.01 - US); H01L 21/76877 (2013.01 - US); H01L 23/5226 (2013.01 - US); H01L 23/528 (2013.01 - EP US); H01L 27/0611 (2013.01 - KR); H10B 99/22 (2023.02 - CN EP KR US); G11C 5/025 (2013.01 - EP); G11C 8/10 (2013.01 - EP); G11C 8/14 (2013.01 - EP)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 3584836 A1 20191225; EP 3584836 B1 20211027; CN 110620112 A 20191227; CN 110620112 B 20230418; JP 2019220663 A 20191226; JP 6800186 B2 20201216; KR 102498174 B1 20230209; KR 20190143326 A 20191230; TW 202002213 A 20200101; TW I692848 B 20200501; US 10497566 B1 20191203; US 2019385848 A1 20191219

DOCDB simple family (application)

EP 18180832 A 20180629; CN 201810945103 A 20180817; JP 2018154459 A 20180821; KR 20180094270 A 20180813; TW 107127943 A 20180810; US 201816012608 A 20180619