EP 3598501 A3 20200129 - SOLID-STATE IMAGING DEVICE, METHOD FOR FABRICATING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
Title (en)
SOLID-STATE IMAGING DEVICE, METHOD FOR FABRICATING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
Title (de)
FESTKÖRPERBILDGEBUNGSVORRICHTUNG, HERSTELLUNGSVERFAHREN FÜR EINE FESTKÖRPERBILDGEBUNGSVORRICHTUNG UND ELEKTRONISCHE VORRICHTUNG
Title (fr)
DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION D'UN DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR ET APPAREIL ÉLECTRONIQUE
Publication
Application
Priority
JP 2018134131 A 20180717
Abstract (en)
One object of the present invention is to provide a solid-state imaging device, a method for fabricating a solid-state imaging device, and an electronic apparatus that implement both a wide dynamic range and a high sensitivity. A storage capacitor serving as a storage capacitance element includes a first electrode and a second electrode on a second substrate surface side. The first electrode is formed of a p+ region (the second conductivity type semiconductor region) formed in the surface of a second substrate surface of a substrate, and the second electrode is formed above the second substrate surface so as to be opposed at a distance to the first electrode in the direction perpendicular to the substrate surface. The first electrode and the second electrode are arranged so as to spatially overlap with a photoelectric conversion part in the direction perpendicular to the substrate surface.
IPC 8 full level
H01L 27/146 (2006.01); H04N 25/00 (2023.01)
CPC (source: CN EP)
H01L 27/14603 (2013.01 - CN); H01L 27/14605 (2013.01 - CN); H01L 27/14609 (2013.01 - CN); H01L 27/1461 (2013.01 - EP); H01L 27/14612 (2013.01 - CN EP); H01L 27/1464 (2013.01 - EP); H01L 27/14643 (2013.01 - CN); H01L 27/14656 (2013.01 - EP); H01L 27/14683 (2013.01 - CN); H04N 25/59 (2023.01 - EP); H04N 25/76 (2023.01 - CN); H04N 25/771 (2023.01 - EP); H01L 27/14603 (2013.01 - EP); H01L 27/1463 (2013.01 - EP)
Citation (search report)
- [YA] EP 1746820 A1 20070124 - SUGAWA SHIGETOSHI [JP], et al
- [Y] US 2009201400 A1 20090813 - ZHANG GUANGBIN [US], et al
- [Y] US 2006263975 A1 20061123 - CHENG KANGGUO [US], et al
- [Y] US 2016268220 A1 20160915 - TSAI TSUNG-HAN [TW], et al
- [Y] US 2012242875 A1 20120927 - NAKAMURA RYOSUKE [JP]
- [A] US 2004251482 A1 20041216 - RHODES HOWARD E [US]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3598501 A2 20200122; EP 3598501 A3 20200129; EP 3598501 B1 20220601; CN 110729317 A 20200124; CN 110729317 B 20220614; JP 2020017724 A 20200130; JP 7455525 B2 20240326; TW 202006961 A 20200201; TW I725484 B 20210421
DOCDB simple family (application)
EP 19186765 A 20190717; CN 201910647131 A 20190717; JP 2019130986 A 20190716; TW 108125329 A 20190717