Global Patent Index - EP 3612343 A1

EP 3612343 A1 20200226 - METHOD FOR REDUCING THE THICKNESS OF SOLID-STATE LAYERS PROVIDED WITH COMPONENTS

Title (en)

METHOD FOR REDUCING THE THICKNESS OF SOLID-STATE LAYERS PROVIDED WITH COMPONENTS

Title (de)

VERFAHREN ZUM DÜNNEN VON MIT BAUTEILEN VERSEHENEN FESTKÖRPERSCHICHTEN

Title (fr)

PROCÉDÉ D'AMINCISSEMENT DE COUCHES DE SOLIDES POURVUES DE COMPOSANTS

Publication

EP 3612343 A1 20200226 (DE)

Application

EP 18701002 A 20180115

Priority

  • DE 102017003830 A 20170420
  • DE 102017007585 A 20170811
  • EP 2018050902 W 20180115

Abstract (en)

[origin: WO2018192689A1] The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1). According to the invention, the method preferably comprises at least the steps of: providing the donor substrate (1), wherein the donor substrate (1) has crystal lattice planes (6) which are inclined in relation to a planar main surface (8), wherein the main surface (8) delimits the donor substrate (1) in the longitudinal direction of the donor substrate (1) on one side, wherein a crystal lattice plane normal is inclined in relation to a main surface normal in a first direction, providing at least one laser, introducing laser radiation of the laser into the interior of the donor substrate (1) via the main surface (8) for changing the material properties of the donor substrate (1) in the region of at least one laser focus, wherein the laser focus is formed by laser beams of the laser which are emitted by the laser, wherein the change in the material property by changing the point of entry of the laser radiation into the donor substrate (1) forms a linear shape (103), wherein the changes in the material property are generated on at least one generating plane (4), wherein the crystal lattice planes (6) of the donor substrate (1) are oriented in an inclined manner in relation to the generating plane (4), wherein the linear design (103) is inclined in relation to a sectional line (10) which is produced at the interface between the generating plane (4) and the crystal lattice plane (6), wherein, owing to the changed material property, the donor substrate (1) tears in the form of subcritical cracks, separating the solid body layer (2) by introducing an external force into the donor substrate (1) for connecting the subcritical crack or so much material on the generating plane (4) being changed by means of the laser radiation that the solid body layer (2) becomes detached from the donor substrate (1) with connection of the subcritical crack.

IPC 8 full level

B23K 26/00 (2014.01); B23K 26/0622 (2014.01); B23K 26/53 (2014.01); B28D 5/00 (2006.01); H01L 21/02 (2006.01); B23K 103/00 (2006.01)

CPC (source: EP KR US)

B23K 26/0006 (2013.01 - EP US); B23K 26/0624 (2015.10 - EP US); B23K 26/146 (2015.10 - KR); B23K 26/40 (2013.01 - US); B23K 26/53 (2015.10 - EP KR US); B23K 26/70 (2015.10 - KR); B28D 5/0011 (2013.01 - EP KR US); C30B 31/20 (2013.01 - US); C30B 33/00 (2013.01 - US); H01L 21/02005 (2013.01 - EP); H01L 21/67092 (2013.01 - KR); H01L 21/7813 (2013.01 - EP US); B23K 2101/40 (2018.08 - US); B23K 2103/56 (2018.08 - EP KR US); C30B 29/36 (2013.01 - US); H01L 29/1608 (2013.01 - US); H01L 29/7802 (2013.01 - US); H01L 29/872 (2013.01 - US); Y02P 70/50 (2015.11 - KR); Y02P 80/30 (2015.11 - KR)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2018192689 A1 20181025; CN 110691671 A 20200114; CN 110691671 B 20231010; CN 110769967 A 20200207; EP 3612342 A1 20200226; EP 3612342 B1 20240228; EP 3612343 A1 20200226; JP 2020518130 A 20200618; JP 2020520087 A 20200702; JP 7130667 B2 20220905; JP 7250695 B2 20230403; KR 102551442 B1 20230706; KR 20200008566 A 20200128; KR 20200010256 A 20200130; KR 20220153127 A 20221117; TW 201933453 A 20190816; TW I706453 B 20201001; US 11869810 B2 20240109; US 2020388538 A1 20201210; US 2021197314 A1 20210701; WO 2018192691 A1 20181025

DOCDB simple family (application)

EP 2018050897 W 20180115; CN 201880026395 A 20180115; CN 201880026415 A 20180115; EP 18700578 A 20180115; EP 18701002 A 20180115; EP 2018050902 W 20180115; JP 2019556844 A 20180115; JP 2019556933 A 20180115; KR 20197034065 A 20180115; KR 20197034100 A 20180115; KR 20227039172 A 20180115; TW 107135716 A 20181011; US 201816606540 A 20180115; US 201816606586 A 20180115