EP 3614437 B1 20210505 - SEMICONDUCTOR DIE
Title (en)
SEMICONDUCTOR DIE
Title (de)
HALBLEITERCHIP
Title (fr)
MOULE À SEMICONDUCTEUR
Publication
Application
Priority
EP 18184388 A 20180822
Abstract (en)
[origin: US2020028035A1] The invention describes a semiconductor die comprising at least a first light-emitting diode and a second light-emitting diode, wherein the first light-emitting diode comprises a first diode formed in a first die area and a first phosphor layer deposited over the first die area; the second light-emitting diode comprises a second diode and a second phosphor layer deposited over the second die area; the first diode and the second diode are electrically connected in anti-parallel; and wherein the optical properties of the second phosphor layer differ from the optical properties of the first phosphor layer.
IPC 8 full level
H01L 27/15 (2006.01); H01L 33/50 (2010.01)
CPC (source: CN EP KR US)
F21K 9/90 (2013.01 - US); H01L 25/0753 (2013.01 - CN KR); H01L 27/15 (2013.01 - EP US); H01L 33/005 (2013.01 - KR); H01L 33/48 (2013.01 - CN); H01L 33/50 (2013.01 - CN); H01L 33/504 (2013.01 - KR US); H01L 33/504 (2013.01 - EP); H01L 2933/0033 (2013.01 - CN); H01L 2933/0041 (2013.01 - CN US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 10873011 B2 20201222; US 2020028035 A1 20200123; CN 110739295 A 20200131; CN 110739295 B 20220208; EP 3614437 A1 20200226; EP 3614437 B1 20210505; JP 2020021936 A 20200206; JP 6691995 B2 20200513; KR 102327421 B1 20211117; KR 20200010132 A 20200130; TW 202018974 A 20200516; TW I705584 B 20200921
DOCDB simple family (application)
US 201916516369 A 20190719; CN 201910655581 A 20190719; EP 18184388 A 20180822; JP 2019133654 A 20190719; KR 20190087810 A 20190719; TW 108125722 A 20190719