Global Patent Index - EP 3624982 A1

EP 3624982 A1 20200325 - METHOD FOR PROCESSING, IN PARTICULAR SEPARATING, A SUBSTRATE BY MEANS OF LASER-INDUCED DEEP REACTIVE ETCHING

Title (en)

METHOD FOR PROCESSING, IN PARTICULAR SEPARATING, A SUBSTRATE BY MEANS OF LASER-INDUCED DEEP REACTIVE ETCHING

Title (de)

VERFAHREN ZUR BEARBEITUNG, INSBESONDERE ZUM TRENNEN EINES SUBSTRATES MITTELS LASERINDUZIERTEM TIEFENÄTZEN

Title (fr)

PROCÉDÉ D'USINAGE, EN PARTICULIER DE SÉPARATION, D'UN SUBSTRAT PAR GRAVURE PROFONDE INDUITE PAR LASER

Publication

EP 3624982 A1 20200325 (DE)

Application

EP 18717553 A 20180406

Priority

  • DE 102017110542 A 20170515
  • EP 2018058882 W 20180406

Abstract (en)

[origin: WO2018210484A1] The invention relates to a method for processing a substrate by means of laser-induced deep reactive etching, wherein the laser radiation is moved along a processing line and individual pulses with a spatial laser pulse distance (d) are directed towards the substrate. An anisotropic material removal is then performed by means of etching at an etching rate (R) and an etching duration (t) under the condition 1 > d/(R*t) > 10-5.

IPC 8 full level

B23K 26/00 (2014.01); B23K 26/0622 (2014.01); B23K 26/362 (2014.01); B23K 26/402 (2014.01); B23K 26/53 (2014.01); C03B 33/02 (2006.01); B23K 103/00 (2006.01)

CPC (source: EP KR US)

B23K 26/00 (2013.01 - US); B23K 26/0006 (2013.01 - EP KR US); B23K 26/0622 (2015.10 - EP KR US); B23K 26/361 (2015.10 - EP KR US); B23K 26/362 (2013.01 - US); B23K 26/402 (2013.01 - EP KR US); B23K 26/53 (2015.10 - EP KR US); C03B 33/0222 (2013.01 - EP KR US); C03C 15/00 (2013.01 - EP KR US); C03C 23/0025 (2013.01 - EP KR US); B23K 2103/54 (2018.08 - EP US)

Citation (examination)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2018210484 A1 20181122; CN 110545948 A 20191206; CN 110545948 B 20220225; EP 3624982 A1 20200325; JP 2020517570 A 20200618; JP 2022116133 A 20220809; JP 7396899 B2 20231212; JP 7538175 B2 20240821; KR 102260931 B1 20210604; KR 20190132461 A 20191127; US 11065716 B2 20210720; US 2020180068 A1 20200611

DOCDB simple family (application)

EP 2018058882 W 20180406; CN 201880025435 A 20180406; EP 18717553 A 20180406; JP 2019558349 A 20180406; JP 2022084208 A 20220524; KR 20197031695 A 20180406; US 201816613444 A 20180406