EP 3629385 B1 20210324 - OPTOELECTRONIC INFRARED-EMITTING DEVICE COMPRISING AN ACTIVE LAYER BASED ON GERMANIUM-TIN AND METHOD FOR MANUFACTURING THE SAME
Title (en)
OPTOELECTRONIC INFRARED-EMITTING DEVICE COMPRISING AN ACTIVE LAYER BASED ON GERMANIUM-TIN AND METHOD FOR MANUFACTURING THE SAME
Title (de)
OPTOELEKTRONISCHE INFRAROT-EMITTIERENDE VORRICHTUNG, DIE EINE AKTIVE SCHICHT AUF GERMANIUM-ZINN-BASIS UMFASST, UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
DISPOSITIF OPTOÉLECTRONIQUE ÉMETTEUR D'INFRAROUGE COMPORTANT UNE COUCHE ACTIVE À BASE D'ÉTAIN-GERMANIUM ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
FR 1858948 A 20180928
Abstract (en)
[origin: US11251339B2] A process for fabricating an optoelectronic device for emitting infrared radiation, including:i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper,ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (Tepi), and a second bonding sublayer made from the metal of interest,iii) determining an assembly temperature (Tc) substantially between an ambient temperature (Tamb) and the epitaxy temperature (Tepi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m2; andiv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.
IPC 8 full level
H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01S 5/04 (2006.01); H01S 5/10 (2021.01); H01L 33/08 (2010.01); H01S 5/026 (2006.01); H01S 5/183 (2006.01); H01S 5/187 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01)
CPC (source: EP US)
H01L 33/0054 (2013.01 - US); H01L 33/0093 (2020.05 - EP); H01L 33/34 (2013.01 - US); H01L 33/40 (2013.01 - US); H01L 33/502 (2013.01 - EP); H01S 5/041 (2013.01 - EP); H01S 5/18361 (2013.01 - US); H01S 5/3432 (2013.01 - US); H01L 33/08 (2013.01 - EP); H01L 2933/0041 (2013.01 - EP); H01L 2933/0083 (2013.01 - EP); H01S 5/026 (2013.01 - EP); H01S 5/1046 (2013.01 - EP); H01S 5/18361 (2013.01 - EP); H01S 5/3027 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3629385 A1 20200401; EP 3629385 B1 20210324; FR 3086800 A1 20200403; FR 3086800 B1 20201002; US 11251339 B2 20220215; US 2020343414 A1 20201029
DOCDB simple family (application)
EP 19199589 A 20190925; FR 1858948 A 20180928; US 201916583705 A 20190926