EP 3646387 A1 20200506 - VERTICAL POWER TRANSISTOR WITH IMPROVED CONDUCTIVITY AND HIGH REVERSE-BIASING PERFORMANCE
Title (en)
VERTICAL POWER TRANSISTOR WITH IMPROVED CONDUCTIVITY AND HIGH REVERSE-BIASING PERFORMANCE
Title (de)
VERTIKALER LEISTUNGSTRANSISTOR MIT VERBESSERTER LEITFÄHIGKEIT UND HOHEM SPERRVERHALTEN
Title (fr)
TRANSISTOR DE PUISSANCE VERTICAL PRÉSENTANT UNE CONDUCTIVITÉ AMÉLIORÉE ET DES PERFORMANCES DE BLOCAGE ÉLEVÉES
Publication
Application
Priority
- DE 102017207848 A 20170510
- EP 2018053282 W 20180209
Abstract (en)
[origin: WO2018206165A1] Vertical power transistor (100, 200) with at least one epitaxial layer (103, 203), which comprises a first semiconductor material, which is doped with first charge carriers, and a plurality of trenches (107, 207), wherein the trenches (107, 207) extend from a surface of the epitaxial layer (103, 203) into the interior of the epitaxial layer (103, 203), characterized in that each trench (107, 207) has a region (108, 208) which extends from the trench base up to a specific height, wherein the region (108, 208) is at least partially filled with a second semiconductor material (109, 209) which is doped with second charge carriers, and the region (108, 208) is electrically connected to a source region (105, 205), wherein the first charge carriers and the second charge carriers are different.
IPC 8 full level
H01L 29/78 (2006.01); H01L 29/06 (2006.01)
CPC (source: EP)
H01L 29/0623 (2013.01); H01L 29/7813 (2013.01); H01L 29/1608 (2013.01)
Citation (search report)
See references of WO 2018206165A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102017207848 A1 20181115; EP 3646387 A1 20200506; TW 201907564 A 20190216; WO 2018206165 A1 20181115
DOCDB simple family (application)
DE 102017207848 A 20170510; EP 18708342 A 20180209; EP 2018053282 W 20180209; TW 107115786 A 20180509