EP 3652365 A1 20200520 - METHOD FOR PRODUCING A CRYSTALLINE LAYER IN A III-N COMPOUND BY VAN DER WAALS EPITAXY FROM GRAPHENE
Title (en)
METHOD FOR PRODUCING A CRYSTALLINE LAYER IN A III-N COMPOUND BY VAN DER WAALS EPITAXY FROM GRAPHENE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER KRISTALLINEN SCHICHT IN EINER III-N-VERBINDUNG DURCH VAN-DER-WAALS-EPITAXIE AUS GRAPHEN
Title (fr)
PROCEDE DE REALISATION D'UNE COUCHE CRISTALLINE EN UN COMPOSE III-N PAR EPITAXIE VAN DER WAALS A PARTIR DE GRAPHENE
Publication
Application
Priority
- FR 1756556 A 20170711
- FR 2018051723 W 20180709
Abstract (en)
[origin: WO2019012215A1] The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterised in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (Ttt) no lower than 1050°C and to a stream of ammonia.
IPC 8 full level
C30B 25/18 (2006.01); C30B 29/40 (2006.01)
CPC (source: EP US)
C23C 16/303 (2013.01 - US); C30B 25/10 (2013.01 - US); C30B 25/183 (2013.01 - EP US); C30B 29/403 (2013.01 - EP US)
Citation (search report)
See references of WO 2019012215A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019012215 A1 20190117; EP 3652365 A1 20200520; FR 3068994 A1 20190118; FR 3068994 B1 20211210; US 11162188 B2 20211102; US 2021115589 A1 20210422
DOCDB simple family (application)
FR 2018051723 W 20180709; EP 18752572 A 20180709; FR 1756556 A 20170711; US 201816629467 A 20180709