EP 3652792 B1 20221130 - LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
Title (en)
LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
Title (de)
LICHTEMITTIERENDE DIODE UND HERSTELLUNGSVERFAHREN DAVON
Title (fr)
DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- KR 20170137640 A 20171023
- KR 2018011783 W 20181005
Abstract (en)
[origin: US2019123240A1] A method of manufacturing a light emitting diode (LED) is provided. The method includes forming an n-type semiconductor layer on a substrate, forming an n-type electrode in a first region of the n-type semiconductor layer, forming an active layer in a second region of the n-type semiconductor layer, the second region being a region other than the first region, forming a p-type semiconductor layer on the active layer, and forming a resistance layer by etching regions of the active layer and the p-type semiconductor layer.
IPC 8 full level
H01L 33/00 (2010.01); H01L 33/36 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/08 (2010.01)
CPC (source: EP KR US)
H01L 33/0008 (2013.01 - KR); H01L 33/005 (2013.01 - KR); H01L 33/007 (2013.01 - EP US); H01L 33/14 (2013.01 - US); H01L 33/20 (2013.01 - US); H01L 33/32 (2013.01 - US); H01L 33/36 (2013.01 - KR); H01L 33/38 (2013.01 - US); H01L 33/40 (2013.01 - EP US); H01L 33/44 (2013.01 - EP US); H01L 33/62 (2013.01 - KR); H01L 27/15 (2013.01 - EP); H01L 33/06 (2013.01 - US); H01L 33/08 (2013.01 - EP); H01L 33/32 (2013.01 - EP); H01L 33/42 (2013.01 - US); H01L 2933/0016 (2013.01 - EP US); H01L 2933/0025 (2013.01 - US)
Citation (examination)
- KR 20150062353 A 20150608 - ILJIN LED CO LTD [KR]
- US 2009101926 A1 20090423 - LEE SANG HYUN [KR]
- KR 20120018535 A 20120305 - ILJIN MATERIALS CO LTD [KR]
- EP 2254168 A2 20101124 - LG INNOTEK CO LTD [KR]
- WO 2013189949 A1 20131227 - SOITEC SILICON ON INSULATOR [FR]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 10586893 B2 20200310; US 2019123240 A1 20190425; CN 111194484 A 20200522; CN 111194484 B 20231103; EP 3652792 A1 20200520; EP 3652792 A4 20200708; EP 3652792 B1 20221130; KR 102419593 B1 20220712; KR 20190044964 A 20190502; WO 2019083190 A1 20190502
DOCDB simple family (application)
US 201815923754 A 20180316; CN 201880065361 A 20181005; EP 18870833 A 20181005; KR 20170137640 A 20171023; KR 2018011783 W 20181005