Global Patent Index - EP 3654392 A1

EP 3654392 A1 20200520 - THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION SYSTEM, POWER GENERATION METHOD OF THERMOELECTRIC CONVERSION ELEMENT, AND POWER GENERATION METHOD OF THERMOELECTRIC CONVERSION SYSTEM

Title (en)

THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION SYSTEM, POWER GENERATION METHOD OF THERMOELECTRIC CONVERSION ELEMENT, AND POWER GENERATION METHOD OF THERMOELECTRIC CONVERSION SYSTEM

Title (de)

ELEMENT ZUR THERMOELEKTRISCHEN UMWANDLUNG, SYSTEM ZUR THERMOELEKTRISCHEN UMWANDLUNG, STROMERZEUGUNGSVERFAHREN EINES ELEMENTS ZUR THERMOELEKTRISCHEN UMWANDLUNG UND STROMERZEUGUNGSVERFAHREN EINES SYSTEMS ZUR THERMOELEKTRISCHEN UMWANDLUNG

Title (fr)

ÉLÉMENT DE CONVERSION THERMOÉLECTRIQUE, SYSTÈME DE CONVERSION THERMOÉLECTRIQUE, PROCÉDÉ DE PRODUCTION D'ÉNERGIE D'ÉLÉMENT DE CONVERSION THERMOÉLECTRIQUE ET PROCÉDÉ DE PRODUCTION D'ÉNERGIE D'UN SYSTÈME DE CONVERSION THERMOÉLECTRIQUE

Publication

EP 3654392 A1 20200520 (EN)

Application

EP 19207480 A 20191106

Priority

JP 2018216459 A 20181119

Abstract (en)

A thermoelectric conversion element (100, 200, 300) includes a p-type semiconductor (10), an n-type semiconductor (20), and a depletion layer (30) located at a pn junction interface of the p-type semiconductor (10) and the n-type semiconductor (20). At least one of the p-type semiconductor (10) and the n-type semiconductor (20) is a degenerate semiconductor.

IPC 8 full level

H01L 35/22 (2006.01); H01L 35/32 (2006.01)

CPC (source: CN EP KR US)

H02N 3/00 (2013.01 - CN); H10N 10/01 (2023.02 - KR); H10N 10/10 (2023.02 - CN); H10N 10/13 (2023.02 - US); H10N 10/17 (2023.02 - EP KR US); H10N 10/80 (2023.02 - CN); H10N 10/81 (2023.02 - KR); H10N 10/855 (2023.02 - EP KR US)

Citation (applicant)

WO 2015125823 A1 20150827 - UNIV KYUSHU NAT UNIV CORP [JP]

Citation (search report)

  • [XAI] US 2003042497 A1 20030306 - SPAN GERHARD [AT]
  • [A] EP 1039556 A1 20000927 - SUMITOMO SPEC METALS [JP]
  • [XA] CHAVEZ R ET AL: "High Temperature Thermoelectric Device Concept Using Large AreaPNJunctions", JOURNAL OF ELECTRONIC MATERIALS, WARRENDALE, PA, US, vol. 43, no. 6, 4 March 2014 (2014-03-04), pages 2376 - 2383, XP035314200, ISSN: 0361-5235, [retrieved on 20140304], DOI: 10.1007/S11664-014-3073-X

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 3654392 A1 20200520; CN 111200054 A 20200526; JP 2020088028 A 20200604; KR 20200058293 A 20200527; US 2020161527 A1 20200521

DOCDB simple family (application)

EP 19207480 A 20191106; CN 201911092354 A 20191111; JP 2018216459 A 20181119; KR 20190140498 A 20191105; US 201916675396 A 20191106