EP 3656000 A4 20210804 - MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES

Title (en)

MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES

Title (de)

MIKROSTRUKTURVERBESSERTE LICHTEMPFINDLICHE ADSORPTIONSVORRICHTUNGEN

Title (fr)

DISPOSITIFS PHOTOSENSIBLES À ABSORPTION AMÉLIORÉS PAR DES MICROSTRUCTURES

Publication

EP 3656000 A4 20210804 (EN)

Application

EP 18835833 A 20180723

Priority

US 201762535801 P 20170721
US 201762540524 P 20170802
US 201762542243 P 20170807
US 201762547728 P 20170818
US 201762553844 P 20170902
US 201762556426 P 20170910
US 201762561869 P 20170922
US 201762591072 P 20171127
US 201762599246 P 20171215
US 201762607860 P 20171219
US 201862615314 P 20180109
US 201862623971 P 20180130
US 201862628764 P 20180209
US 201862631630 P 20180217
US 201862633514 P 20180221
US 201862634692 P 20180223
US 201862637945 P 20180302
US 201862639472 P 20180306
US 201862639356 P 20180306
US 201862639920 P 20180307
US 201862640522 P 20180308
US 201862643010 P 20180314
US 201862645810 P 20180321
US 201862646871 P 20180322
US 201862651053 P 20180330
US 201862651087 P 20180331
US 201862652830 P 20180404
US 201862659072 P 20180417
US 201862659067 P 20180417
US 201862662217 P 20180424
US 201862666005 P 20180502
US 201862669194 P 20180509
US 201862675130 P 20180522
US 201862677609 P 20180529
US 201862682909 P 20180609
US 2018043289 W 20180723

Abstract (en)

[origin: WO2019018846A2] Lateral and vertical micro structure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal- semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and lll-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

IPC 8 full level

H01L 31/0236 (2006.01); H01L 27/144 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/105 (2006.01); H01L 31/107 (2006.01); H01L 31/108 (2006.01); H01L 31/12 (2006.01); H01L 31/18 (2006.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/183 (2006.01)

CPC (source: EP)

H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/022466 (2013.01); H01L 31/02363 (2013.01); H01L 31/028 (2013.01); H01L 31/03046 (2013.01); H01L 31/035281 (2013.01); H01L 31/105 (2013.01); H01L 31/107 (2013.01); H01L 31/1085 (2013.01); H01L 31/125 (2013.01); H01L 31/1812 (2013.01); H01S 5/02345 (2021.01); H01S 5/02375 (2021.01); H01S 5/183 (2013.01)

Citation (search report)

[XI] JP 2007013065 A 20070118 - MATSUSHITA ELECTRIC WORKS LTD
[XI] US 2005145779 A1 20050707 - MOCHIZUKI MASAMITSU [JP], et al
[XI] CN 103956403 B 20170215
[A] EP 0940854 A2 19990908 - IBM [US]
[A] WO 0103255 A2 20010111 - SCOTT JEFFREY W [US]
[Y] LEVINE ET AL: "1 Gb/s Si high quantum efficiency monolithically integrable [lambda]=0.88 [mu]m detector", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 66, no. 22, 29 May 1995 (1995-05-29), pages 2984 - 2986, XP012012915, ISSN: 0003-6951, DOI: 10.1063/1.114251
[Y] GAO YANG ET AL: "Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes", NATURE PHOTONICS, vol. 11, no. 5, 3 April 2017 (2017-04-03), UK, pages 301 - 308, XP055785220, ISSN: 1749-4885, Retrieved from the Internet <URL:http://www.nature.com/articles/nphoton.2017.37> DOI: 10.1038/nphoton.2017.37
See references of WO 2019018846A2

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2019018846 A2 20190124; WO 2019018846 A3 20190328; CN 111133590 A 20200508; CN 111133590 B 20240611; EP 3656000 A2 20200527; EP 3656000 A4 20210804; JP 2020537816 A 20201224; JP 7429084 B2 20240207

DOCDB simple family (application)

US 2018043289 W 20180723; CN 201880061391 A 20180723; EP 18835833 A 20180723; JP 2020502957 A 20180723