Global Patent Index - EP 3667723 A1

EP 3667723 A1 20200617 - SWITCHING DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE

Title (en)

SWITCHING DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE

Title (de)

SCHALTVORRICHTUNG UND HERSTELLUNGSVERFAHREN EINER SOLCHEN VORRICHTUNG

Title (fr)

DISPOSITIF DE COMMUTATION ET PROCÉDÉ DE FABRICATION D'UN TEL DISPOSITIF

Publication

EP 3667723 A1 20200617 (FR)

Application

EP 19214599 A 20191209

Priority

FR 1872694 A 20181211

Abstract (en)

[origin: US2020185378A1] The present disclosure concerns a switching device comprising a first phosphorus-doped silicon layer on top of and in contact with a second arsenic-doped silicon layer. The present disclosure also concerns a method of making a switching device that includes forming a phosphorus-doped silicon layer in an arsenic-doped silicon layer.

Abstract (fr)

La présente description concerne un dispositif de commutation (1) comprenant une première couche de silicium dopé au phosphore (103) sur et en contact avec une deuxième couche de silicium dopé à l'arsenic (102).

IPC 8 full level

H01L 27/02 (2006.01); H01L 29/87 (2006.01)

CPC (source: CN EP US)

H01L 27/0248 (2013.01 - US); H01L 27/0255 (2013.01 - CN EP); H01L 27/0262 (2013.01 - CN EP); H01L 27/0783 (2013.01 - US); H01L 29/167 (2013.01 - EP); H01L 29/861 (2013.01 - EP); H01L 21/26513 (2013.01 - US); H01L 21/266 (2013.01 - US)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 3667723 A1 20200617; CN 111312706 A 20200619; CN 211182203 U 20200804; FR 3089679 A1 20200612; US 11532616 B2 20221220; US 2020185378 A1 20200611; US 2023089468 A1 20230323

DOCDB simple family (application)

EP 19214599 A 20191209; CN 201911255813 A 20191210; CN 201922192734 U 20191210; FR 1872694 A 20181211; US 201916709753 A 20191210; US 202218053722 A 20221108