Global Patent Index - EP 3669398 A4

EP 3669398 A4 20210901 - THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BONDED CHIP ASSEMBLY WITH THROUGH-SUBSTRATE VIA STRUCTURES AND METHOD OF MAKING THE SAME

Title (en)

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BONDED CHIP ASSEMBLY WITH THROUGH-SUBSTRATE VIA STRUCTURES AND METHOD OF MAKING THE SAME

Title (de)

DREIDIMENSIONALE SPEICHERVORRICHTUNG MIT GEBONDETER CHIP-ANORDNUNG MIT SUBSTRATDURCHGANGSSTRUKTUREN UND VERFAHREN ZUR HERSTELLUNG DAVON

Title (fr)

DISPOSITIF DE MÉMOIRE TRIDIMENSIONNEL CONTENANT UN ENSEMBLE PUCE LIÉ AVEC DES STRUCTURES DE TROU D'INTERCONNEXION TRAVERSANT UN SUBSTRAT ET SON PROCÉDÉ DE FABRICATION

Publication

EP 3669398 A4 20210901 (EN)

Application

EP 18910814 A 20181120

Priority

  • US 201815928340 A 20180322
  • US 201815928407 A 20180322
  • US 2018062107 W 20181120

Abstract (en)

[origin: WO2019182657A1] Multiple semiconductor chips can be bonded through copper-to-copper bonding. The multiple semiconductor chips include a logic chip and multiple memory chips. The logic chip includes a peripheral circuitry for operation of memory devices within the multiple memory chips. The memory chips can include front side bonding pad structures, backside bonding pad structures, and sets of metal interconnect structures providing electrically conductive paths between pairs of a first side bonding pad structure and a backside bonding pad structure. Thus, electrical control signal can vertically propagate between the logic chip and an overlying memory chip through at least one intermediate memory chip located between them. The backside bonding pad structures can be formed as portions of integrated through- substrate via and pad structures that extend through a respective semiconductor substrate.

IPC 8 full level

H10B 41/20 (2023.01); H10B 43/40 (2023.01); H01L 21/768 (2006.01); H01L 21/98 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01); H10B 41/35 (2023.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01); H10B 43/27 (2023.01)

CPC (source: EP KR)

H01L 21/6835 (2013.01 - EP); H01L 21/76898 (2013.01 - EP); H01L 23/5226 (2013.01 - KR); H01L 23/58 (2013.01 - EP); H01L 24/06 (2013.01 - KR); H01L 24/97 (2013.01 - KR); H01L 25/0657 (2013.01 - EP); H01L 25/18 (2013.01 - EP); H01L 25/50 (2013.01 - EP); H10B 41/20 (2023.02 - KR); H10B 41/35 (2023.02 - KR); H10B 43/20 (2023.02 - KR); H10B 43/40 (2023.02 - EP); H01L 24/05 (2013.01 - EP); H01L 24/11 (2013.01 - EP); H01L 24/13 (2013.01 - EP); H01L 24/16 (2013.01 - EP); H01L 24/81 (2013.01 - EP); H01L 2221/68327 (2013.01 - EP); H01L 2221/6834 (2013.01 - EP); H01L 2224/03002 (2013.01 - EP); H01L 2224/03462 (2013.01 - EP); H01L 2224/03464 (2013.01 - EP); H01L 2224/05567 (2013.01 - EP); H01L 2224/05647 (2013.01 - EP); H01L 2224/08146 (2013.01 - EP); H01L 2224/11002 (2013.01 - EP); H01L 2224/11462 (2013.01 - EP); H01L 2224/11464 (2013.01 - EP); H01L 2224/13009 (2013.01 - EP); H01L 2224/13022 (2013.01 - EP); H01L 2224/13147 (2013.01 - EP); H01L 2224/16146 (2013.01 - EP); H01L 2224/48227 (2013.01 - EP); H01L 2224/81895 (2013.01 - EP); H01L 2225/06541 (2013.01 - EP); H01L 2225/06544 (2013.01 - EP); H01L 2924/15311 (2013.01 - EP); H10B 43/27 (2023.02 - EP)

C-Set (source: EP)

  1. H01L 2224/11462 + H01L 2924/00014
  2. H01L 2224/11464 + H01L 2924/00014
  3. H01L 2224/13147 + H01L 2924/00014
  4. H01L 2224/81895 + H01L 2924/00014
  5. H01L 2224/05647 + H01L 2924/00014
  6. H01L 2224/03462 + H01L 2924/00014
  7. H01L 2224/03464 + H01L 2924/00014

Citation (search report)

Citation (examination)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2019182657 A1 20190926; CN 111247636 A 20200605; CN 111247636 B 20240419; EP 3669398 A1 20200624; EP 3669398 A4 20210901; KR 102297701 B1 20210906; KR 20200037444 A 20200408

DOCDB simple family (application)

US 2018062107 W 20181120; CN 201880068190 A 20181120; EP 18910814 A 20181120; KR 20207009288 A 20181120