Global Patent Index - EP 3704770 A1

EP 3704770 A1 20200909 - DIODE LASER

Title (en)

DIODE LASER

Title (de)

DIODENLASER

Title (fr)

LASER À DIODES

Publication

EP 3704770 A1 20200909 (DE)

Application

EP 18796655 A 20181102

Priority

  • DE 102017219581 A 20171103
  • EP 2018080034 W 20181102

Abstract (en)

[origin: WO2019086619A1] The invention relates to a laser assembly (1) comprising a diode laser bar (2), a heat sink (4) and at least one cover (7). The laser bar is located between the heat sink and the cover. The heat sink and/or the cover is/are coated with nanowires (16) or nanotubes via which the contact between the laser bar and the heat sink and/or the cover is established.

IPC 8 full level

H01S 5/022 (2006.01); H01S 5/024 (2006.01); H01S 5/40 (2006.01)

CPC (source: EP US)

H01S 5/02355 (2021.01 - EP); H01S 5/02365 (2021.01 - EP US); H01S 5/02469 (2013.01 - US); H01S 5/4018 (2013.01 - US); H01S 5/4043 (2013.01 - US); H01S 5/0234 (2021.01 - EP); H01S 5/02476 (2013.01 - EP); H01S 5/4018 (2013.01 - EP); H01S 5/4025 (2013.01 - EP); H01S 5/405 (2013.01 - EP)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2019086619 A1 20190509; CN 111316513 A 20200619; EP 3704770 A1 20200909; JP 2021501997 A 20210121; US 11557881 B2 20230117; US 2020395738 A1 20201217

DOCDB simple family (application)

EP 2018080034 W 20181102; CN 201880071233 A 20181102; EP 18796655 A 20181102; JP 2020524405 A 20181102; US 201816761460 A 20181102