EP 3706157 A1 20200909 - WET ETCH PATTERNING OF AN ALUMINUM NITRIDE FILM
Title (en)
WET ETCH PATTERNING OF AN ALUMINUM NITRIDE FILM
Title (de)
NASSÄTZSTRUKTURIERUNG EINER ALUMINIUMNITRIDFOLIE
Title (fr)
GRAVURE HUMIDE D'UN FILM DE NITRURE D'ALUMINIUM
Publication
Application
Priority
US 201916292926 A 20190305
Abstract (en)
A method of manufacturing a patterned aluminum nitride layer includes growing an amorphous patterned layer (10) on a seed layer (12), which promotes growth of a first type aluminum nitride layer (14) that has a disordered crystallographic structure. The seed layer promotes growth of a second type aluminum nitride layer (16) with a vertically oriented columnar crystal structure. The method also includes depositing an aluminum nitride layer over the amorphous patterned layer and the seed layer to form the first type aluminum nitride layer with the disordered crystallographic structure over the amorphous patterned layer and the second type aluminum nitride layer with the vertically oriented columnar crystal structure over the seed layer. The method also includes depositing a masking layer (18) over the second type aluminum nitride layer and etching away the first type aluminum nitride layer.
IPC 8 full level
H01L 21/306 (2006.01); B81C 1/00 (2006.01)
CPC (source: BR EP US)
B81C 1/00373 (2013.01 - BR); B81C 1/00492 (2013.01 - EP); B81C 1/00595 (2013.01 - US); C30B 29/403 (2013.01 - BR); H01L 21/30612 (2013.01 - EP); H01L 21/30617 (2013.01 - EP); B81C 2201/0133 (2013.01 - US)
Citation (search report)
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- [XI] SARAVANAN S ET AL: "A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators", SENSORS AND ACTUATORS A: PHYSICAL, ELSEVIER BV, NL, vol. 130-131, 14 August 2006 (2006-08-14), pages 340 - 345, XP027935626, ISSN: 0924-4247, [retrieved on 20060814]
- [XI] KYONGWON SEO ET AL: "MICROMACHINED PIEZOELECTRIC MICROSPEAKERS FABRICATED WITH HIGH QUALITY ALN THIN FILM", INTEGRATED FERROELECTRICS, vol. 95, no. 1, 11 December 2007 (2007-12-11), US, pages 74 - 82, XP055700204, ISSN: 1058-4587, DOI: 10.1080/10584580701756524
- [XI] SHARMA R K ET AL: "Process development and integration of piezoelectric aluminum nitride thin-film for RF MEMS applications", NANO- AND MICROELECTROMECHANICAL SYSTEMS (NEMS AND MEMS) AND MOLECULAR MACHINES (MATER. RES. SOC. VOL.741), MATER. RES. SOC.WARRENDALE, PA, US, vol. 741, 1 January 2003 (2003-01-01), pages 169 - 174, XP009520752, ISBN: 978-1-55899-678-6, DOI: 10.1557/PROC-741-J5.43
- [IA] ABABNEH A ET AL: "Etching behaviour of sputter-deposited aluminium nitride thin films in H3PO4 and KOH solutions", MICROSYSTEM TECHNOLOGIES, BERLIN, DE, vol. 14, no. 4-5, 30 April 2008 (2008-04-30), pages 567 - 573, XP002620193, ISSN: 0946-7076, [retrieved on 20080129], DOI: 10.1007/S00542-007-0450-X
- [A] KUCHIBHATLA ET AL: "Investigating the Stress and Crystal Quality of AlN Air-Bridges through Micro-Raman Scattering", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 1139, no. 1139-GG03-46, 1 January 2008 (2008-01-01), US, pages 169 - 174, XP055700788, ISSN: 0272-9172, DOI: 10.1557/PROC-1139-GG03-46
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
US 10662058 B1 20200526; BR 102019025361 A2 20200929; CA 3062002 A1 20200905; EP 3706157 A1 20200909
DOCDB simple family (application)
US 201916292926 A 20190305; BR 102019025361 A 20191129; CA 3062002 A 20191118; EP 19210133 A 20191119