EP 3707972 A1 20200916 - METHOD AND DEVICE FOR THE INTEGRATION OF SEMICONDUCTOR WAFERS
Title (en)
METHOD AND DEVICE FOR THE INTEGRATION OF SEMICONDUCTOR WAFERS
Title (de)
VERFAHREN UND VORRICHTUNG ZUR INTEGRATION VON HALBLEITER-WAFERN
Title (fr)
PROCÉDÉ ET DISPOSITIF POUR L'INTÉGRATION DE PASTILLES SEMI-CONDUCTRICES
Publication
Application
Priority
- DE 102017126410 A 20171110
- DE 102018211313 A 20180709
- EP 2018078361 W 20181017
Abstract (en)
[origin: WO2019091728A1] The invention relates to a method for the integration of semiconductor components (9) in a confined space, in particular for 3D integration, in which, after positioning relative to a supporting substrate (10) and/or redistribution layer RDL (13) the semiconductor components (9) are protected and fixed in their relative position by introduction of a potting compound (12), is characterised in that before the introduction of the potting compound (12) a glass substrate (1) having a plurality of recesses (2) separated by partitions (3) to receive a semiconductor component (9) is positioned in such a way that the semiconductor component (9) is surrounded by the side wall surfaces (8) facing the semiconductor component of the respective partitions (3) of the glass substrate (1).
IPC 8 full level
H05K 1/18 (2006.01); H01L 21/60 (2006.01)
CPC (source: EP KR US)
H01L 21/4853 (2013.01 - US); H01L 21/4857 (2013.01 - US); H01L 21/561 (2013.01 - US); H01L 21/565 (2013.01 - US); H01L 21/568 (2013.01 - US); H01L 21/6835 (2013.01 - US); H01L 23/3128 (2013.01 - US); H01L 23/5383 (2013.01 - US); H01L 23/5386 (2013.01 - US); H01L 23/5389 (2013.01 - US); H01L 24/19 (2013.01 - EP KR US); H01L 24/20 (2013.01 - US); H01L 24/96 (2013.01 - EP KR US); H05K 1/185 (2013.01 - KR); H01L 2221/68372 (2013.01 - US); H01L 2224/12105 (2013.01 - EP KR); H01L 2224/214 (2013.01 - US); H01L 2224/95001 (2013.01 - US); H01L 2924/14 (2013.01 - EP KR); H01L 2924/1431 (2013.01 - EP KR); H01L 2924/1432 (2013.01 - EP KR); H01L 2924/1434 (2013.01 - EP KR); H01L 2924/3511 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019091728 A1 20190516; CN 111434191 A 20200717; CN 111434191 B 20231020; EP 3707972 A1 20200916; JP 2021502706 A 20210128; JP 7090153 B2 20220623; KR 102538306 B1 20230607; KR 20200086319 A 20200716; MY 197514 A 20230619; US 11515259 B2 20221129; US 2020266152 A1 20200820
DOCDB simple family (application)
EP 2018078361 W 20181017; CN 201880072819 A 20181017; EP 18792891 A 20181017; JP 2020525997 A 20181017; KR 20207016258 A 20181017; MY PI2020002297 A 20181017; US 201816762446 A 20181017