EP 3711092 A1 20200923 - THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRACE REGION AND METHOD OF MAKING THEREOF
Title (en)
THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRACE REGION AND METHOD OF MAKING THEREOF
Title (de)
DREIDIMENSIONALE SPEICHERVORRICHTUNG MIT VERDICKTEN WORTLEITUNGEN IN DER TERRASSENREGION UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
DISPOSITIF DE MÉMOIRE TRIDIMENSIONNEL AVEC LIGNES DE MOTS PLUS ÉPAISSES DANS UNE RÉGION DE TERRASSE ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- US 201715813579 A 20171115
- US 201715813625 A 20171115
- US 2018052227 W 20180921
Abstract (en)
[origin: WO2019099103A1] A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. Memory stack structures are located in a memory array region, each of which includes a memory film and a vertical semiconductor channel. Contact via structures located in the terrace region and contact a respective one of the electrically conductive layers. Each of the electrically conductive layers has a respective first thickness throughout the memory array region and includes a contact portion having a respective second thickness that is greater than the respective first thickness within a terrace region. The greater thickness of the contact portion prevents an etch-through during formation of contact via cavities for forming the contact via structures.
IPC 8 full level
H01L 27/11556 (2017.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01); H01L 27/1157 (2017.01)
CPC (source: EP KR)
H01L 23/5226 (2013.01 - KR); H01L 25/0657 (2013.01 - KR); H10B 41/27 (2023.02 - KR); H10B 43/27 (2023.02 - EP); H10B 43/35 (2023.02 - EP KR); H10B 43/50 (2023.02 - EP); H01L 21/76816 (2013.01 - EP); H01L 21/76834 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019099103 A1 20190523; CN 111149206 A 20200512; CN 111149206 B 20230818; EP 3711092 A1 20200923; EP 3711092 A4 20201202; EP 3893277 A1 20211013; KR 102235246 B1 20210402; KR 20200035473 A 20200403
DOCDB simple family (application)
US 2018052227 W 20180921; CN 201880063144 A 20180921; EP 18878898 A 20180921; EP 21173855 A 20180921; KR 20207008531 A 20180921