EP 3718131 A1 20201007 - SEMICONDUCTOR PROCESSING EQUIPMENT WITH HIGH TEMPERATURE RESISTANT NICKEL ALLOY JOINTS AND METHODS FOR MAKING SAME
Title (en)
SEMICONDUCTOR PROCESSING EQUIPMENT WITH HIGH TEMPERATURE RESISTANT NICKEL ALLOY JOINTS AND METHODS FOR MAKING SAME
Title (de)
HALBLEITERVERARBEITUNGSANLAGE MIT HOCHTEMPERATURBESTÄNDIGEN NICKELLEGIERUNGSVERBINDUNGEN UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
ÉQUIPEMENT DE TRAITEMENT DE SEMI-CONDUCTEURS COMPRENANT DES JOINTS EN ALLIAGE DE NICKEL RÉSISTANT AUX TEMPÉRATURES ÉLEVÉES ET PROCÉDÉS DE FABRICATION DE CET ÉQUIPEMENT
Publication
Application
Priority
- US 201762592348 P 20171129
- US 2018063169 W 20181129
Abstract (en)
[origin: WO2019108858A1] A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
IPC 8 full level
H01L 21/50 (2006.01)
CPC (source: EP KR US)
B23K 1/0016 (2013.01 - EP KR US); B23K 1/008 (2013.01 - EP KR US); B23K 1/19 (2013.01 - US); B23K 35/286 (2013.01 - US); B32B 9/005 (2013.01 - EP KR US); C04B 35/581 (2013.01 - US); C04B 37/005 (2013.01 - US); C04B 37/006 (2013.01 - EP KR); C04B 37/026 (2013.01 - US); H01L 21/67126 (2013.01 - EP KR US); H01L 21/6833 (2013.01 - US); H01L 21/68757 (2013.01 - EP KR US); H01L 21/68785 (2013.01 - EP KR US); H01L 21/68792 (2013.01 - EP KR US); B23K 2103/52 (2018.08 - EP KR US); C04B 2235/6581 (2013.01 - EP US); C04B 2237/122 (2013.01 - EP KR); C04B 2237/123 (2013.01 - EP KR US); C04B 2237/126 (2013.01 - EP US); C04B 2237/127 (2013.01 - EP US); C04B 2237/128 (2013.01 - EP US); C04B 2237/34 (2013.01 - EP US); C04B 2237/343 (2013.01 - EP US); C04B 2237/348 (2013.01 - EP); C04B 2237/365 (2013.01 - EP US); C04B 2237/366 (2013.01 - EP KR US); C04B 2237/368 (2013.01 - EP US); C04B 2237/592 (2013.01 - EP); C04B 2237/64 (2013.01 - EP); C04B 2237/68 (2013.01 - EP US); C04B 2237/708 (2013.01 - EP US); C04B 2237/72 (2013.01 - EP US); C04B 2237/765 (2013.01 - EP); C04B 2237/80 (2013.01 - EP US); C04B 2237/84 (2013.01 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019108858 A1 20190606; EP 3718131 A1 20201007; EP 3718131 A4 20211124; JP 2021504287 A 20210215; JP 7418327 B2 20240119; KR 102689408 B1 20240729; KR 20210003079 A 20210111; KR 20230155594 A 20231110; TW 201927726 A 20190716; TW I825045 B 20231211; US 11648620 B2 20230516; US 2019291199 A1 20190926; US 2023278123 A1 20230907
DOCDB simple family (application)
US 2018063169 W 20181129; EP 18883543 A 20181129; JP 2020529568 A 20181129; KR 20207018791 A 20181129; KR 20237036667 A 20181129; TW 107142769 A 20181129; US 201816203562 A 20181128; US 202318317571 A 20230515