EP 3718133 A4 20211124 - CATALYST INFLUENCED PATTERN TRANSFER TECHNOLOGY
Title (en)
CATALYST INFLUENCED PATTERN TRANSFER TECHNOLOGY
Title (de)
KATALYSATORBEEINFLUSSTE STRUKTURÜBERTRAGUNGSTECHNIK
Title (fr)
TECHNOLOGIE DE TRANSFERT DE MOTIF INFLUENCÉ PAR UN CATALYSEUR
Publication
Application
Priority
- US 201762591326 P 20171128
- US 201862665084 P 20180501
- US 201862701049 P 20180720
- US 201862729361 P 20180910
- US 2018060176 W 20181109
Abstract (en)
[origin: WO2019108366A1] Various embodiments of the present technology generally relate to semiconductor device architectures and manufacturing techniques. More specifically, some embodiments of the present technology relate to silicon etching using catalyst influenced chemical etching technology with application to three-dimensional memory architectures and transistors. CICE is a catalyst based etching method that can be used on semiconductors as well as multilayers of the semiconductors. Various embodiments of the CICE process can use a catalyst to etch semiconducting substrates and to fabricate high aspect ratio features. A fabrication tool for this purpose is also disclosed. This shall enable adoption of this technology in making semiconductor devices.
IPC 8 full level
H01L 21/306 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR)
H01L 21/30604 (2013.01 - EP KR); H01L 21/3065 (2013.01 - EP KR); H01L 21/823431 (2013.01 - EP KR); H01L 27/0886 (2013.01 - EP KR); H01L 29/42392 (2013.01 - EP KR); H01L 29/66795 (2013.01 - EP KR); H01L 29/7854 (2013.01 - EP KR); H01L 29/78696 (2013.01 - EP KR); H10B 43/10 (2023.02 - EP KR); H10B 43/27 (2023.02 - EP KR); H10B 43/50 (2023.02 - EP KR)
Citation (search report)
- [XY] US 2011263119 A1 20111027 - LI XIULING [US], et al
- [Y] WO 2013056186 A1 20130418 - UNIV CALIFORNIA [US], et al
- [A] US 2010248449 A1 20100930 - HILDRETH OWEN [US], et al
- [A] RASOOL KAMRAN ET AL: "Enhanced electrical and dielectric properties of polymer covered silicon nanowire arrays", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 101, no. 2, 9 July 2012 (2012-07-09), pages 23114 - 23114, XP012163884, ISSN: 0003-6951, [retrieved on 20120712], DOI: 10.1063/1.4735278
- [A] PUDASAINI PUSHPA RAJ ET AL: "Nanostructured plasmonics silicon solar cells", MICROELECTRONIC ENGINEERING, vol. 110, 14 March 2013 (2013-03-14), pages 126 - 131, XP028673729, ISSN: 0167-9317, DOI: 10.1016/J.MEE.2013.02.104
- See also references of WO 2019108366A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2019108366 A1 20190606; CN 111670493 A 20200915; EP 3718133 A1 20201007; EP 3718133 A4 20211124; JP 2021504961 A 20210215; JP 2023145718 A 20231011; JP 7328220 B2 20230816; KR 20200090237 A 20200728; SG 11202005030X A 20200629; TW 201926460 A 20190701
DOCDB simple family (application)
US 2018060176 W 20181109; CN 201880088011 A 20181109; EP 18884487 A 20181109; JP 2020529365 A 20181109; JP 2023127219 A 20230803; KR 20207018511 A 20181109; SG 11202005030X A 20181109; TW 107141826 A 20181123