EP 3724377 A1 20201021 - METHOD FOR VALIDATING THE THERMAL HISTORY OF A SEMICONDUCTOR INGOT
Title (en)
METHOD FOR VALIDATING THE THERMAL HISTORY OF A SEMICONDUCTOR INGOT
Title (de)
VERFAHREN ZUR VALIDIERUNG DER THERMISCHEN HISTORIE EINES HALBLEITERBLOCKS
Title (fr)
MÉTHODE DE VALIDATION DE L'HISTOIRE THERMIQUE D'UN LINGOT SEMI-CONDUCTEUR
Publication
Application
Priority
- FR 1762282 A 20171215
- EP 2018084450 W 20181212
Abstract (en)
[origin: WO2019115574A1] The invention relates to an experimental method for validating a thermal history of a semiconductor ingot obtained by simulation of a crystallization process. This method comprises the following steps: a) measuring the concentration of interstitial oxygen in a portion of the semiconductor ingot; b) calculating a theoretical value of the concentration of thermal donors formed during the crystallization process, from the measurement of the concentration of interstitial oxygen and from the thermal history in the portion of the semiconductor ingot; c) measuring an experimental value of the concentration of thermal donors in the portion of the semiconductor ingot; and d) comparing the theoretical and experimental values of the concentration of thermal donors.
IPC 8 full level
C30B 15/20 (2006.01); C30B 29/06 (2006.01); G01N 27/04 (2006.01)
CPC (source: EP KR US)
C30B 15/206 (2013.01 - EP KR US); C30B 29/06 (2013.01 - EP KR US); G01N 27/041 (2013.01 - EP KR); G01N 27/041 (2013.01 - US)
Citation (search report)
See references of WO 2019115574A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019115574 A1 20190620; CA 3085769 A1 20190620; CN 111479957 A 20200731; CN 111479957 B 20220823; EP 3724377 A1 20201021; FR 3075379 A1 20190621; FR 3075379 B1 20191122; KR 20200098612 A 20200820; US 11359305 B2 20220614; US 2021079555 A1 20210318
DOCDB simple family (application)
EP 2018084450 W 20181212; CA 3085769 A 20181212; CN 201880080782 A 20181212; EP 18814626 A 20181212; FR 1762282 A 20171215; KR 20207020082 A 20181212; US 201816772613 A 20181212