EP 3730638 A4 20210414 - COPPER FINE PARTICLE SINTERED BODY
Title (en)
COPPER FINE PARTICLE SINTERED BODY
Title (de)
GESINTERTER KÖRPER AUS FEINEN KUPFERTEILCHEN
Title (fr)
CORPS FRITTÉ DE PARTICULES FINES DE CUIVRE
Publication
Application
Priority
- JP 2017241762 A 20171218
- JP 2018040673 W 20181101
Abstract (en)
[origin: EP3730638A1] A problem to be solved by the present invention is to provide a bonding member in which copper fine particles are used as a bonding member of a semiconductor device component and which does not cause cracking, peeling, or the like in a semiconductor device when operated under a high-temperature condition of 200°C or more. To solve the problem, a copper fine particle sintered body for bonding a semiconductor device component is provided, the copper fine particle sintered body being characterized in that when the Vickers hardness of the copper fine particle sintered body at 150°C is Hvb and the Vickers hardness of the copper fine particle sintered body at 25°C is Hva, a value of (Hvb/Hva) × 100 is 5-20%.
IPC 8 full level
C22C 1/04 (2006.01); B22F 1/054 (2022.01); B22F 1/0545 (2022.01); B22F 7/06 (2006.01); H01M 4/04 (2006.01); B22F 1/102 (2022.01)
CPC (source: EP KR US)
B22F 1/054 (2022.01 - EP KR US); B22F 1/0545 (2022.01 - EP KR US); B22F 7/064 (2013.01 - EP US); B23K 1/0016 (2013.01 - KR US); B23K 35/0244 (2013.01 - US); B23K 35/302 (2013.01 - KR US); C22C 1/0425 (2013.01 - KR); C22C 9/00 (2013.01 - KR); B22F 1/056 (2022.01 - EP KR US); B22F 1/102 (2022.01 - EP KR US); B22F 2998/10 (2013.01 - EP); B22F 2999/00 (2013.01 - EP); B23K 2101/40 (2018.08 - KR US); B23K 2103/12 (2018.08 - US); Y10T 428/12014 (2015.01 - US)
C-Set (source: EP KR US)
EP
- B22F 2999/00 + B22F 3/10 + B22F 2201/01 + B22F 2201/013 + B22F 2201/10 + B22F 2201/11 + B22F 2201/02
- B22F 2998/10 + B22F 9/24 + B22F 1/102 + B22F 3/10 + B22F 7/064
KR US
B22F 2998/10 + B22F 9/24 + B22F 1/102 + B22F 3/10 + B22F 7/064
Citation (search report)
- [X] WO 2017188123 A1 20171102 - HITACHI CHEMICAL CO LTD [JP]
- [X] JP 2014167145 A 20140911 - UNIV OSAKA, et al
- [X] JP 2008244242 A 20081009 - HITACHI LTD
- See also references of WO 2019123856A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 3730638 A1 20201028; EP 3730638 A4 20210414; CN 111417735 A 20200714; CN 111417735 B 20221004; JP 6638863 B2 20200129; JP WO2019123856 A1 20191219; KR 102508790 B1 20230314; KR 20200096507 A 20200812; TW 201928076 A 20190716; TW I796399 B 20230321; US 2021162551 A1 20210603; WO 2019123856 A1 20190627
DOCDB simple family (application)
EP 18890597 A 20181101; CN 201880077321 A 20181101; JP 2018040673 W 20181101; JP 2019514057 A 20181101; KR 20207014303 A 20181101; TW 107144539 A 20181211; US 201816772802 A 20181101