Global Patent Index - EP 3766109 B1

EP 3766109 B1 20230830 - FERROELECTRIC MATERIAL, MEMS COMPONENT COMPRISING THIS MATERIAL, MEMS DEVICE, AND PRODUCTION METHOD

Title (en)

FERROELECTRIC MATERIAL, MEMS COMPONENT COMPRISING THIS MATERIAL, MEMS DEVICE, AND PRODUCTION METHOD

Title (de)

FERROELEKTRISCHES MATERIAL, MEMS-BAUTEIL MIT DIESEM MATERIAL, MEMS-VORRICHTUNG, SOWIE HERSTELLUNGSVERFAHREN

Title (fr)

MATÉRIAU FERROÉLECTRIQUE, COMPOSANT MEMS DOTÉ DUDIT MATÉRIAU, DISPOSITIF MEMS ET PROCÉDÉ DE FABRICATION

Publication

EP 3766109 B1 20230830 (DE)

Application

EP 19711863 A 20190313

Priority

  • DE 102018203812 A 20180313
  • EP 2019056275 W 20190313

Abstract (en)

[origin: WO2019175236A1] Ferroelectric material comprising a mixed crystal comprising AlN and at least one transition metal nitride. The proportion of the transition metal nitride is chosen such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by a switchover voltage being applied. In this case, the switchover voltage is below a breakdown voltage of the ferroelectric material.

IPC 8 full level

H10N 30/853 (2023.01); B81B 3/00 (2006.01); H10N 30/045 (2023.01); H10N 30/20 (2023.01); H10N 30/50 (2023.01); H10N 30/87 (2023.01)

CPC (source: EP KR US)

B81B 3/0021 (2013.01 - EP KR); B81B 7/02 (2013.01 - US); H10N 30/045 (2023.02 - EP KR US); H10N 30/2042 (2023.02 - EP US); H10N 30/50 (2023.02 - EP KR US); H10N 30/704 (2024.05 - EP KR US); H10N 30/853 (2023.02 - EP KR US); B81B 2201/03 (2013.01 - US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2019175236 A1 20190919; CN 112088440 A 20201215; CN 112088440 B 20240209; DE 102018203812 A1 20190919; EP 3766109 A1 20210120; EP 3766109 B1 20230830; JP 2021520074 A 20210812; JP 7090753 B2 20220624; KR 102650928 B1 20240322; KR 20200135392 A 20201202; US 11744158 B2 20230829; US 2020411747 A1 20201231; US 2023354713 A1 20231102

DOCDB simple family (application)

EP 2019056275 W 20190313; CN 201980030568 A 20190313; DE 102018203812 A 20180313; EP 19711863 A 20190313; JP 2020572614 A 20190313; KR 20207029145 A 20190313; US 202017016941 A 20200910; US 202318220666 A 20230711