EP 3774640 A1 20210217 - BOND STRUCTURES ON MEMS ELEMENT AND ASIC ELEMENT
Title (en)
BOND STRUCTURES ON MEMS ELEMENT AND ASIC ELEMENT
Title (de)
BOND-STRUKTUREN AUF MEMS-ELEMENT UND ASIC-ELEMENT
Title (fr)
STRUCTURES DE LIAISON SUR L'ÉLÉMENT MEMS ET L'ÉLÉMENT ASIC
Publication
Application
Priority
- DE 102018205156 A 20180405
- EP 2019055641 W 20190307
Abstract (en)
[origin: WO2019192797A1] The invention relates to a MEMS element (100), comprising: a substrate (10); - a first passivation layer (20) arranged on the substrate (10); - a metal layer (30) arranged on the first passivation layer (20); - a second passivation layer (40) arranged on the metal layer (30) and on the first passivation layer (20); and - a punch element (60), an electrically conductive diffusion-blocking layer (50) being arranged on the punch element (60) and on the second passivation layer (40), a first bonding element (70) being arranged on the punch element (60).
IPC 8 full level
B81C 1/00 (2006.01)
CPC (source: EP US)
B81B 7/0006 (2013.01 - US); B81C 1/00238 (2013.01 - EP US); B81B 2201/0264 (2013.01 - US); B81B 2207/012 (2013.01 - EP US); B81B 2207/07 (2013.01 - US); B81C 2203/035 (2013.01 - EP US); B81C 2203/0792 (2013.01 - US)
Citation (search report)
See references of WO 2019192797A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019192797 A1 20191010; CN 111936413 A 20201113; DE 102018205156 A1 20191010; EP 3774640 A1 20210217; US 2020399116 A1 20201224
DOCDB simple family (application)
EP 2019055641 W 20190307; CN 201980022934 A 20190307; DE 102018205156 A 20180405; EP 19711515 A 20190307; US 201916977458 A 20190307