EP 3775329 A1 20210217 - METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL, AND SUBSTRATE FOR EPITAXICALLY GROWING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL
Title (en)
METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL, AND SUBSTRATE FOR EPITAXICALLY GROWING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER MONOKRISTALLINEN SCHICHT AUS DIAMANT ODER IRIDIUM UND SUBSTRAT ZUM EPITAKTISCHEN ZÜCHTEN EINER MONOKRISTALLINEN SCHICHT AUS DIAMANT ODER IRIDIUM
Title (fr)
PROCÉDÉ DE FABRICATION D'UNE COUCHE MONOCRISTALLINE DE MATÉRIAU DIAMANT OU IRIDIUM ET SUBSTRAT POUR CROISSANCE PAR ÉPITAXIE D'UNE COUCHE MONOCRISTALLINE DE MATÉRIAU DIAMANT OU IRIDIUM
Publication
Application
Priority
- FR 1800255 A 20180328
- IB 2019000196 W 20190326
Abstract (en)
[origin: WO2019186262A1] Method for manufacturing a monocrystalline layer of diamond or iridium material, including transferring a monocrystalline seed layer of SrTiO3 material onto a support substrate of silicon material, followed by epitaxially growing the monocrystalline layer of diamond or iridium material.
IPC 8 full level
C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/02 (2006.01); C30B 29/04 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP KR US)
C30B 23/025 (2013.01 - EP KR US); C30B 25/183 (2013.01 - EP KR US); C30B 29/02 (2013.01 - EP KR); C30B 29/04 (2013.01 - EP KR US); C30B 29/06 (2013.01 - US); H01L 21/02293 (2013.01 - US); H01L 21/76254 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019186262 A1 20191003; CN 111936676 A 20201113; EP 3775329 A1 20210217; FR 3079535 A1 20191004; FR 3079535 B1 20220318; JP 2021518322 A 20210802; JP 7408893 B2 20240109; KR 102654904 B1 20240404; KR 20200136437 A 20201207; SG 11202009528Q A 20201029; US 11935743 B2 20240319; US 2021020434 A1 20210121
DOCDB simple family (application)
IB 2019000196 W 20190326; CN 201980021528 A 20190326; EP 19721378 A 20190326; FR 1800255 A 20180328; JP 2020549793 A 20190326; KR 20207030291 A 20190326; SG 11202009528Q A 20190326; US 201917042728 A 20190326