EP 3802913 A1 20210414 - COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM
Title (en)
COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM
Title (de)
ZUSAMMENSETZUNGEN UND VERFAHREN MIT VERWENDUNG DAVON ZUR ABSCHEIDUNG VON SILICIUMHALTIGEM FILM
Title (fr)
COMPOSITIONS ET PROCÉDÉS UTILISANT DE TELLES COMPOSITIONS POUR LE DÉPÔT D'UN FILM CONTENANT DU SILICIUM
Publication
Application
Priority
- US 201862683142 P 20180611
- US 201916433585 A 20190606
- US 2019036456 W 20190611
Abstract (en)
[origin: US2019376178A1] Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound comprising a carbon-carbon double or carbon-carbon triple bond. The plasma source employed comprises both a remote plasma source and an in-situ plasma source operating in combination.
IPC 8 full level
C23C 16/32 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01)
CPC (source: EP IL KR US)
C23C 16/045 (2013.01 - EP IL); C23C 16/30 (2013.01 - EP IL); C23C 16/308 (2013.01 - KR); C23C 16/325 (2013.01 - IL KR US); C23C 16/345 (2013.01 - KR); C23C 16/36 (2013.01 - IL US); C23C 16/401 (2013.01 - KR); C23C 16/4488 (2013.01 - KR); C23C 16/45553 (2013.01 - IL); C23C 16/50 (2013.01 - EP IL KR); C23C 16/513 (2013.01 - IL US); H01L 21/0217 (2013.01 - KR); H01L 21/02211 (2013.01 - KR); H01L 21/02219 (2013.01 - KR); H01L 21/02274 (2013.01 - KR); C23C 16/45553 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
US 2019376178 A1 20191212; CN 112292479 A 20210129; EP 3802913 A1 20210414; EP 3802913 A4 20220216; IL 279250 A 20210131; JP 2021527331 A 20211011; JP 2022161979 A 20221021; JP 7125515 B2 20220824; JP 7485732 B2 20240516; KR 102549427 B1 20230628; KR 20210006029 A 20210115; SG 11202011890X A 20201230; TW 202000677 A 20200101; TW 202120729 A 20210601; TW I720506 B 20210301; WO 2019241183 A1 20191219
DOCDB simple family (application)
US 201916433585 A 20190606; CN 201980039035 A 20190611; EP 19820430 A 20190611; IL 27925020 A 20201207; JP 2020568739 A 20190611; JP 2022128939 A 20220812; KR 20217000711 A 20190611; SG 11202011890X A 20190611; TW 108120022 A 20190611; TW 110105968 A 20190611; US 2019036456 W 20190611