EP 3807938 A1 20210421 - OPTOELECTRONIC DEVICES HAVING A DILUTE NITRIDE LAYER
Title (en)
OPTOELECTRONIC DEVICES HAVING A DILUTE NITRIDE LAYER
Title (de)
OPTOELEKTRONISCHE VORRICHTUNGEN MIT EINER VERDÜNNTEN NITRIDSCHICHT
Title (fr)
DISPOSITIFS OPTOÉLECTRONIQUES AVEC COUCHE DE NITRURE DILUÉ
Publication
Application
Priority
- US 201862685039 P 20180614
- US 2019036857 W 20190612
Abstract (en)
[origin: WO2019241450A1] Optoelectronic devices having GalnNAsSb, GalnNAsBi or GalnNAsSbBi active layers are disclosed. The optoelectronic devices have an active or absorbing layer, with a bandgap within a range from 0.7 eV and 1.2 eV. The active layer is coupled to a multiplication layer. The multiplication layer is designed to provide a large optical gain with a high signal-to-noise ratio at low light levels at wavelengths up to 1.8 μm.
IPC 8 full level
H01L 31/107 (2006.01); H01L 31/0304 (2006.01)
CPC (source: EP US)
H01L 31/03048 (2013.01 - EP US); H01L 31/035236 (2013.01 - US); H01L 31/1075 (2013.01 - EP US); H01L 31/1848 (2013.01 - US); H01L 31/1856 (2013.01 - US)
Citation (search report)
See references of WO 2019241450A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2019241450 A1 20191219; CN 113169244 A 20210723; EP 3807938 A1 20210421; TW 202015249 A 20200416; TW 202115920 A 20210416; TW I717756 B 20210201; US 2021249545 A1 20210812
DOCDB simple family (application)
US 2019036857 W 20190612; CN 201980047357 A 20190612; EP 19735450 A 20190612; TW 108120671 A 20190614; TW 109146311 A 20190614; US 201917251110 A 20190612