EP 3830848 A1 20210609 - ARRANGEMENT UND METHOD FOR THE GRADUAL SHUTOFF OF POTENTIAL IN HIGH VOLTAGE TECHNOLOGY
Title (en)
ARRANGEMENT UND METHOD FOR THE GRADUAL SHUTOFF OF POTENTIAL IN HIGH VOLTAGE TECHNOLOGY
Title (de)
ANORDNUNG UND VERFAHREN ZUR POTENTIALABSTEUERUNG IN DER HOCHSPANNUNGSTECHNIK
Title (fr)
AGENCEMENT ET PROCÉDÉ DE DÉCHARGE DE POTENTIEL DANS LA TECHNIQUE LIÉE AUX HAUTES TENSIONS
Publication
Application
Priority
- DE 102018215274 A 20180907
- EP 2019071291 W 20190808
Abstract (en)
[origin: WO2020048720A1] The invention relates to an arrangement (27) and to a method for the gradual shutoff of potential in high voltage technology, comprising at least one armature body (28), electrically insulating film (29), and electrically conductive regions (4), wherein the electrically conductive regions (4) are arranged between layers of the electrically insulating films (29), and at least parts of the electrically insulating film (29) are arranged around the at least one armature body (28). The arrangement (27) is designed for direct current applications, wherein resistive compensation currents are reduced and/or avoided along the electrically insulating film (29) by configuration for higher voltage levels, and/or by an armature body (28), which functions as a first gradual potential shutoff coating, and/or by means of the electrical contacting of the outermost electrically conductive region (4) between layers of electrically insulating film (29) via an electrical contact (30) through an opening (31) in the outer layer of the insulating film (29).
IPC 8 full level
H01F 38/30 (2006.01); H01B 17/28 (2006.01)
CPC (source: EP US)
H01B 17/26 (2013.01 - US); H01F 27/2885 (2013.01 - EP US); H01F 27/32 (2013.01 - US); H01B 17/28 (2013.01 - EP)
Citation (examination)
US 3055968 A 19620925 - SPIECE STANLEY J
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2020048720 A1 20200312; BR 112021004217 A2 20210525; CA 3111846 A1 20200312; CL 2021000545 A1 20210924; CN 112868077 A 20210528; CN 112868077 B 20240611; DE 102018215274 A1 20200312; EP 3830848 A1 20210609; US 12131860 B2 20241029; US 2021313109 A1 20211007
DOCDB simple family (application)
EP 2019071291 W 20190808; BR 112021004217 A 20190808; CA 3111846 A 20190808; CL 2021000545 A 20210305; CN 201980067819 A 20190808; DE 102018215274 A 20180907; EP 19761737 A 20190808; US 201917274231 A 20190808