EP 3830862 A4 20211229 - PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY
Title (en)
PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY
Title (de)
STRUKTURIERUNG VON PLATIN DURCH LEGIEREN UND ÄTZEN EINER PLATINLEGIERUNG
Title (fr)
FORMATION DE MOTIFS SUR PLATINE PAR ALLIAGE ET GRAVURE D'ALLIAGE DE PLATINE
Publication
Application
Priority
- US 201862703937 P 20180727
- US 201916523867 A 20190726
- US 2019043850 W 20190729
Abstract (en)
[origin: US2020035500A1] There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.
IPC 8 full level
H01L 21/3213 (2006.01); H01L 21/283 (2006.01); H01L 29/43 (2006.01)
CPC (source: EP KR US)
B81C 1/00539 (2013.01 - EP); C23F 1/02 (2013.01 - EP); C23F 1/30 (2013.01 - EP US); C23F 1/44 (2013.01 - EP US); G01K 7/18 (2013.01 - KR); G01N 27/30 (2013.01 - KR); H01L 21/244 (2013.01 - US); H01L 21/2855 (2013.01 - KR); H01L 21/28568 (2013.01 - KR); H01L 21/30604 (2013.01 - US); H01L 21/3081 (2013.01 - US); H01L 21/32051 (2013.01 - KR); H01L 21/32134 (2013.01 - EP); H01L 21/32139 (2013.01 - EP)
Citation (search report)
- [A] JP S5843539 A 19830314 - NIPPON ELECTRIC CO
- [A] US 4740485 A 19880426 - SHARPE-GEISLER BRADLEY A [US]
- See also references of WO 2020023953A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 11011381 B2 20210518; US 2020035500 A1 20200130; CN 112753093 A 20210504; EP 3830862 A1 20210609; EP 3830862 A4 20211229; JP 2021531415 A 20211118; JP 2024072836 A 20240528; JP 7476442 B2 20240501; KR 102646859 B1 20240313; KR 20210035189 A 20210331; KR 20240038117 A 20240322; US 11658034 B2 20230523; US 2021242029 A1 20210805; US 2023253211 A1 20230810; WO 2020023953 A1 20200130
DOCDB simple family (application)
US 201916523867 A 20190726; CN 201980063516 A 20190729; EP 19840061 A 20190729; JP 2021527030 A 20190729; JP 2024033639 A 20240306; KR 20217002330 A 20190729; KR 20247007826 A 20190729; US 2019043850 W 20190729; US 202117234833 A 20210420; US 202318299850 A 20230413