EP 3834040 A1 20210616 - METHOD AND ASSEMBLY FOR CHARACTERIZING A MASK OR A WAFER FOR MICROLITHOGRAPHY
Title (en)
METHOD AND ASSEMBLY FOR CHARACTERIZING A MASK OR A WAFER FOR MICROLITHOGRAPHY
Title (de)
VERFAHREN UND ANORDNUNG ZUR CHARAKTERISIERUNG EINER MASKE ODER EINES WAFERS FÜR DIE MIKROLITHOGRAPHIE
Title (fr)
PROCÉDÉ ET DISPOSITIF POUR LA CARACTÉRISATION D'UN MASQUE OU D'UNE TRANCHE POUR LA MICROLITHOGRAPHIE
Publication
Application
Priority
- DE 102018213127 A 20180806
- EP 2019069910 W 20190724
Abstract (en)
[origin: WO2020030432A1] The invention relates to a method and to an assembly for characterizing a mask or a wafer for microlithography. A method according to the invention has the following steps: illuminating the object (104, 204) with electromagnetic radiation (106, 206) produced by a radiation source, using an illumination device; capturing, in each of a plurality of measurement steps, an intensity distribution in a diffraction image produced by the object, using a detecting device, the measurement steps differing from one another with respect to the illumination setting set by the illumination device; determining at least one characteristic variable which is characteristic of the object, on the basis of an iteratively performed comparison of the measured values obtained in the measurement steps with values model-simulated values; wherein: the model-simulated values are determined on the basis of a multiple-layer model, in which the object is modeled by a multiple-layer structure of layers separated from one another by respective boundary surfaces, the boundary surfaces being assigned a location-dependent reflectivity; and the illumination device and the detecting device are arranged on the same side of the object such that the diffraction image is captured in reflection.
IPC 8 full level
G03F 1/84 (2012.01); G01N 21/956 (2006.01); G03F 7/20 (2006.01)
CPC (source: EP US)
G03F 1/84 (2013.01 - EP); G03F 7/702 (2013.01 - US); G03F 7/705 (2013.01 - US); G03F 7/70625 (2013.01 - US); G03F 7/7065 (2013.01 - EP US); G03F 7/7085 (2013.01 - US); G01N 21/9501 (2013.01 - EP); G01N 2021/95676 (2013.01 - EP)
Citation (search report)
See references of WO 2020030432A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102018213127 A1 20200206; EP 3834040 A1 20210616; US 11269260 B2 20220308; US 2021157243 A1 20210527; WO 2020030432 A1 20200213
DOCDB simple family (application)
DE 102018213127 A 20180806; EP 19749271 A 20190724; EP 2019069910 W 20190724; US 202117164747 A 20210201