EP 3846231 A4 20211013 - PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING PIEZOELECTRIC DEVICE
Title (en)
PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING PIEZOELECTRIC DEVICE
Title (de)
PIEZOELEKTRISCHE VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER PIEZOELEKTRISCHEN VORRICHTUNG
Title (fr)
DISPOSITIF PIÉZOÉLECTRIQUE ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- JP 2018161453 A 20180830
- JP 2019029890 W 20190730
Abstract (en)
[origin: US2021143316A1] A piezoelectric device and a manufacturing method thereof in which a piezoelectric film formed of a thin film of a lead zirconate titanate-based perovskite oxide is formed on a substrate, and at least a first region out of the first region and a second region of the piezoelectric film is irradiated with electromagnetic waves having a wavelength of 230 nm or less in a reducing atmosphere to provide a difference in piezoelectric characteristics between the first region and the second region so that the first region has a smaller absolute value of a piezoelectric constant d31 and a smaller dielectric loss tan δ than the second region.
IPC 8 full level
H10N 30/00 (2023.01); H10N 30/853 (2023.01); H10N 30/01 (2023.01); H10N 30/04 (2023.01); H10N 30/045 (2023.01); H10N 30/093 (2023.01); H10N 30/20 (2023.01); H10N 30/30 (2023.01)
CPC (source: EP US)
H10N 30/04 (2023.02 - EP); H10N 30/045 (2023.02 - US); H10N 30/101 (2024.05 - EP US); H10N 30/2042 (2023.02 - EP); H10N 30/302 (2023.02 - EP); H10N 30/704 (2024.05 - EP); H10N 30/8554 (2023.02 - EP US); H10N 30/076 (2023.02 - EP)
Citation (search report)
- [XAI] JP 2016092089 A 20160523 - FUJIFILM CORP
- [L] JP 2015216190 A 20151203 - STANLEY ELECTRIC CO LTD
- [A] JP 2005253274 A 20050915 - MATSUSHITA ELECTRIC IND CO LTD
- [A] BASTANI Y ET AL: "Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response", APPLIED PHYSICS LETTERS, vol. 102, 192906, 13 May 2013 (2013-05-13), XP012172981, ISSN: 0003-6951, DOI: 10.1063/1.4805045
- See also references of WO 2020044919A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
US 12063864 B2 20240813; US 2021143316 A1 20210513; CN 112714963 A 20210427; EP 3846231 A1 20210707; EP 3846231 A4 20211013; EP 3846231 B1 20240911; JP 6932268 B2 20210908; JP WO2020044919 A1 20210520; WO 2020044919 A1 20200305
DOCDB simple family (application)
US 202117153809 A 20210120; CN 201980053808 A 20190730; EP 19854795 A 20190730; JP 2019029890 W 20190730; JP 2020540173 A 20190730