EP 3869534 A1 20210825 - IN-SITU ETCH RATE OR DEPOSITION RATE MEASUREMENT SYSTEM
Title (en)
IN-SITU ETCH RATE OR DEPOSITION RATE MEASUREMENT SYSTEM
Title (de)
IN-SITU-ÄTZRATEN- ODER ABSCHEIDUNGSRATENMESSSYSTEM
Title (fr)
SYSTÈME DE MESURE DE VITESSE DE GRAVURE OU DE DÉPÔT SUR SITE
Publication
Application
Priority
EP 20158398 A 20200220
Abstract (en)
The invention relates to a system for in-situ ion beam etch rate or deposition rate measurement, comprising: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.
IPC 8 full level
H01J 37/22 (2006.01); G01B 11/06 (2006.01); H01J 37/304 (2006.01); H01J 37/305 (2006.01)
CPC (source: EP KR US)
G01B 11/0675 (2013.01 - EP KR US); G01B 11/0683 (2013.01 - EP KR); H01J 37/226 (2013.01 - EP KR); H01J 37/304 (2013.01 - EP KR US); H01J 37/3053 (2013.01 - EP KR); H01J 2237/30466 (2013.01 - EP KR US); H01J 2237/3151 (2013.01 - EP KR); H01J 2237/31749 (2013.01 - EP KR)
Citation (search report)
- [XI] US 2007100580 A1 20070503 - MARCUS MICHAEL A [US], et al
- [XI] US 2009065478 A1 20090312 - DOCKERY KEVIN P [US], et al
- [A] JP S59150534 A 19840828 - ULVAC CORP
- [A] US 5947053 A 19990907 - BURNHAM JAY [US], et al
- [A] S. GÜRTLER ET AL: "ISERM: in-situ etch rate measurement system", SPIE - INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING. PROCEEDINGS, vol. 10009, 30 June 2016 (2016-06-30), US, pages 100090N, XP055715549, ISSN: 0277-786X, ISBN: 978-1-5106-3549-4, DOI: 10.1117/12.2236642
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3869534 A1 20210825; CA 3171977 A1 20210826; CN 115136277 A 20220930; JP 2023514393 A 20230405; KR 20220137992 A 20221012; TW 202133293 A 20210901; TW I776392 B 20220901; US 2023139375 A1 20230504; WO 2021165043 A1 20210826
DOCDB simple family (application)
EP 20158398 A 20200220; CA 3171977 A 20210203; CN 202180015080 A 20210203; EP 2021052552 W 20210203; JP 2022549911 A 20210203; KR 20227031631 A 20210203; TW 110105507 A 20210218; US 202117800565 A 20210203