EP 3881349 A1 20210922 - SELECTIVE DEPOSITION OF METAL SILICIDES AND SELECTIVE OXIDE REMOVAL
Title (en)
SELECTIVE DEPOSITION OF METAL SILICIDES AND SELECTIVE OXIDE REMOVAL
Title (de)
SELEKTIVE ABSCHEIDUNG VON METALLSILIZIDEN UND SELEKTIVE OXIDENTFERNUNG
Title (fr)
DÉPÔT SÉLECTIF DE SILICIURES MÉTALLIQUES ET ÉLIMINATION SÉLECTIVE D'OXYDE
Publication
Application
Priority
- US 2019052967 W 20190925
- US 201816189429 A 20181113
Abstract (en)
[origin: WO2020101806A1] Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.
IPC 8 full level
H01L 21/285 (2006.01); C23C 16/42 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01)
CPC (source: EP KR)
C23C 16/0209 (2013.01 - EP); C23C 16/0236 (2013.01 - EP); C23C 16/0245 (2013.01 - EP); C23C 16/04 (2013.01 - EP); C23C 16/42 (2013.01 - EP KR); C23C 16/45525 (2013.01 - EP); C23C 16/45542 (2013.01 - KR); C23C 16/45553 (2013.01 - KR); C23C 16/46 (2013.01 - KR); H01L 21/02046 (2013.01 - EP); H01L 21/02068 (2013.01 - EP); H01L 21/28518 (2013.01 - EP KR); H01L 21/28562 (2013.01 - EP KR); H01L 21/31116 (2013.01 - KR); H01L 21/324 (2013.01 - KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2020101806 A1 20200522; CN 113348532 A 20210903; EP 3881349 A1 20210922; EP 3881349 A4 20220824; JP 2022506677 A 20220117; JP 7503547 B2 20240620; KR 20210076166 A 20210623; TW 202035759 A 20201001; TW I833831 B 20240301
DOCDB simple family (application)
US 2019052967 W 20190925; CN 201980074914 A 20190925; EP 19884016 A 20190925; JP 2021524215 A 20190925; KR 20217017913 A 20190925; TW 108140376 A 20191107