EP 3882973 A4 20220112 - SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
Title (en)
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
Title (de)
FESTKÖRPERBILDGEBUNGSVORRICHTUNG UND ELEKTRONISCHES GERÄT
Title (fr)
DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR ET APPAREIL ÉLECTRONIQUE
Publication
Application
Priority
- JP 2018213147 A 20181113
- JP 2019042356 W 20191029
Abstract (en)
[origin: EP3882973A1] A solid-state imaging device according to an embodiment of the present disclosure includes a mode-switching switch section that, in a first mode, electrically couples a first signal path to a photoelectric conversion section and electrically decouples a second signal path from the photoelectric conversion section, and that, in a second mode, electrically couples both of the first signal path and the second signal path to the photoelectric conversion section. At least the photoelectric conversion section is formed in a first substrate, and at least a second amplification transistor is formed in a second substrate, among the first substrate and the second substrate stacked on each other.
IPC 8 full level
H01L 27/146 (2006.01); H04N 5/355 (2011.01); H04N 5/369 (2011.01); H04N 5/3745 (2011.01)
CPC (source: EP KR US)
H01L 27/14603 (2013.01 - EP KR); H01L 27/14609 (2013.01 - KR); H01L 27/14612 (2013.01 - US); H01L 27/14614 (2013.01 - EP); H01L 27/1463 (2013.01 - EP); H01L 27/14634 (2013.01 - EP KR); H01L 27/14636 (2013.01 - EP KR US); H01L 27/14643 (2013.01 - US); H01L 27/14831 (2013.01 - US); H04N 25/42 (2023.01 - KR); H04N 25/587 (2023.01 - EP); H04N 25/59 (2023.01 - EP KR US); H04N 25/70 (2023.01 - KR); H04N 25/75 (2023.01 - US); H04N 25/771 (2023.01 - EP); H04N 25/772 (2023.01 - US); H04N 25/78 (2023.01 - EP KR); H04N 25/79 (2023.01 - EP US); H01L 27/1464 (2013.01 - EP); H01L 27/14641 (2013.01 - EP)
Citation (search report)
- [YD] JP 2003134396 A 20030509 - CANON KK
- [Y] JP 2013009301 A 20130110 - OLYMPUS CORP
- [Y] JP 2012248952 A 20121213 - OLYMPUS CORP
- [Y] WO 2017161060 A1 20170921 - DARTMOUTH COLLEGE [US]
- [Y] US 8773562 B1 20140708 - FAN XIAOFENG [US]
- [Y] JP 2007150361 A 20070614 - MATSUSHITA ELECTRIC IND CO LTD
- [Y] US 2016233263 A1 20160811 - OKADA YASUTAKA [JP]
- See also references of WO 2020100577A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3882973 A1 20210922; EP 3882973 A4 20220112; EP 3882973 B1 20240703; CN 112970115 A 20210615; EP 4411819 A2 20240807; JP WO2020100577 A1 20210930; KR 20210092725 A 20210726; TW 202029733 A 20200801; US 2022077207 A1 20220310; WO 2020100577 A1 20200522
DOCDB simple family (application)
EP 19885232 A 20191029; CN 201980073018 A 20191029; EP 24179505 A 20191029; JP 2019042356 W 20191029; JP 2020555983 A 20191029; KR 20217012707 A 20191029; TW 108140199 A 20191106; US 201917291316 A 20191029