EP 3883884 A1 20210929 - DOPED SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING SAME AND USES THEREOF
Title (en)
DOPED SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING SAME AND USES THEREOF
Title (de)
DOTIERTE HALBLEITERNANOKRISTALLE, VERFAHREN ZUR HERSTELLUNG DAVON UND VERWENDUNGEN DAVON
Title (fr)
NANOCRISTAUX DE SEMI-CONDUCTEURS DOPÉS, LEUR PROCÉDÉ DE PRÉPARATION ET LEURS UTILISATIONS
Publication
Application
Priority
- FR 1874171 A 20181226
- FR 2019053287 W 20191223
Abstract (en)
[origin: WO2020136347A1] The present invention concerns a set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the -III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state. The present invention also relates to the method for preparing same and to the various uses thereof.
IPC 8 full level
C01B 25/08 (2006.01); C09K 11/70 (2006.01); C30B 29/40 (2006.01); H01L 29/207 (2006.01)
CPC (source: EP US)
C01B 25/088 (2013.01 - EP); C09K 11/70 (2013.01 - EP US); C30B 7/14 (2013.01 - EP US); C30B 29/40 (2013.01 - EP US); H01L 31/055 (2013.01 - EP US); H01L 33/502 (2013.01 - EP US); B82Y 30/00 (2013.01 - EP); B82Y 40/00 (2013.01 - EP); Y02E 10/52 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2020136347 A1 20200702; CN 113498405 A 20211012; EP 3883884 A1 20210929; FR 3091274 A1 20200703; FR 3091274 B1 20230428; US 11905446 B2 20240220; US 2022064525 A1 20220303
DOCDB simple family (application)
FR 2019053287 W 20191223; CN 201980092678 A 20191223; EP 19850730 A 20191223; FR 1874171 A 20181226; US 201917418347 A 20191223