Global Patent Index - EP 3899616 A1

EP 3899616 A1 20211027 - PVD DIRECTIONAL DEPOSITION FOR ENCAPSULATION

Title (en)

PVD DIRECTIONAL DEPOSITION FOR ENCAPSULATION

Title (de)

GERICHTETE PVD-ABLAGERUNG ZUR VERKAPSELUNG

Title (fr)

DÉPÔT DIRECTIONNEL PVD POUR ENCAPSULATION

Publication

EP 3899616 A1 20211027 (EN)

Application

EP 19900271 A 20191217

Priority

  • US 201862780793 P 20181217
  • US 2019066710 W 20191217

Abstract (en)

[origin: US2020192108A1] Embodiments described herein relate to encapsulated nanostructured optical devices and methods of encapsulating gratings of such devices by asymmetric selective physical vapor deposition (PVD). In some embodiments, a method for encapsulating optical device gratings includes a first PVD process and a second PVD process that may be carried out simultaneously or sequentially. The first PVD process may provide a first stream of material at a first angle non-perpendicular to a substrate of the grating. The second PVD process may provide a second stream of material at a second angle non-perpendicular to the substrate of the grating. The combination of the first PVD process and the second PVD process forms an encapsulation layer over the grating and one or more air gaps between adjacent fins of the grating.

IPC 8 full level

G02B 6/13 (2006.01); G02B 6/122 (2006.01)

CPC (source: EP KR US)

C23C 14/042 (2013.01 - US); C23C 14/046 (2013.01 - EP US); C23C 14/225 (2013.01 - EP US); C23C 14/3407 (2013.01 - EP US); C23C 14/3464 (2013.01 - EP US); C23C 14/568 (2013.01 - EP); G02B 1/14 (2015.01 - EP); G02B 5/1861 (2013.01 - EP); G02B 5/1866 (2013.01 - US); G02B 6/12004 (2013.01 - EP); G02B 6/1226 (2013.01 - KR); G02B 6/124 (2013.01 - EP); G02B 6/13 (2013.01 - KR); G02B 6/132 (2013.01 - EP US); G02B 6/34 (2013.01 - US); G02B 27/0172 (2013.01 - US); G02B 27/1073 (2013.01 - US); G02B 2027/0178 (2013.01 - US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

US 11851740 B2 20231226; US 2020192108 A1 20200618; CN 113242990 A 20210810; EP 3899616 A1 20211027; EP 3899616 A4 20220817; JP 2022513448 A 20220208; KR 20210094111 A 20210728; TW 202032629 A 20200901; TW 202429543 A 20240716; TW I835950 B 20240321; US 2024084435 A1 20240314; WO 2020131783 A1 20200625

DOCDB simple family (application)

US 201916716691 A 20191217; CN 201980083748 A 20191217; EP 19900271 A 20191217; JP 2021533310 A 20191217; KR 20217022332 A 20191217; TW 108146141 A 20191217; TW 113107375 A 20191217; US 2019066710 W 20191217; US 202318511631 A 20231116