EP 3916803 A1 20211201 - SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Title (en)
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Title (de)
HALBLEITERBAUELEMENT UND STROMUMWANDLUNGSVORRICHTUNG
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR ET DISPOSITIF DE CONVERSION DE PUISSANCE
Publication
Application
Priority
JP 2020090325 A 20200525
Abstract (en)
To provide a highly reliable semiconductor device having a termination structure in which a semiconductor active region is surrounded with a guard ring and capable of preventing corrosion of a metal layer connected to the guard ring. The semiconductor device includes: an active region formed on a main surface of a semiconductor substrate; and a guard ring region formed on the main surface so as to surround the active region, the guard ring region includes a guard ring formed on the semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate so as to cover the guard ring, a field plate disposed on the interlayer insulating film and electrically connected to the guard ring via a contact penetrating the interlayer insulating film, and a protective film covering the field plate, the field plate has a laminated structure including a first metal in contact with the guard ring and a second metal which is disposed in contact with the first metal and has a lower standard potential than the first metal, and a ratio of a contact area of the first metal with the protective film to a contact area of the second metal with the protective film is 0.05 or less.
IPC 8 full level
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01)
CPC (source: CN EP US)
H01L 29/0603 (2013.01 - CN); H01L 29/0619 (2013.01 - EP); H01L 29/0623 (2013.01 - US); H01L 29/0638 (2013.01 - EP US); H01L 29/402 (2013.01 - US); H01L 29/404 (2013.01 - CN EP); H01L 29/41 (2013.01 - CN); H01L 29/7397 (2013.01 - CN EP US); H02M 7/5387 (2013.01 - US); H01L 23/3157 (2013.01 - EP); H01L 29/1095 (2013.01 - EP); H01L 29/417 (2013.01 - EP); H01L 29/66348 (2013.01 - EP); H02P 27/06 (2013.01 - US)
Citation (applicant)
- JP 2010251404 A 20101104 - HITACHI LTD
- JP 2011100811 A 20110519 - RENESAS ELECTRONICS CORP
- WO 2014084124 A1 20140605 - FUJI ELECTRIC CO LTD [JP]
Citation (search report)
- [I] US 2016043013 A1 20160211 - ROTH ROMAN [AT], et al
- [Y] US 2018226400 A1 20180809 - SHINSHO KOHEI [JP]
- [YD] JP 2010251404 A 20101104 - HITACHI LTD
- [I] US 9355958 B2 20160531 - SCHÄFFER CARSTEN [AT], et al
- [A] EP 0703627 A1 19960327 - HITACHI LTD [JP]
- [T] ANONYMOUS: "Standard electrode potential (data page)", INTERNET CITATION, 10 February 2011 (2011-02-10), pages 1 - 8, XP002621690, Retrieved from the Internet <URL:http://en.wikipedia.org/w/index.php?title=Standard_electrode_potential_(data_page)&printable=yes> [retrieved on 20110210]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3916803 A1 20211201; CN 113725279 A 20211130; JP 2021185593 A 20211209; TW 202213772 A 20220401; TW I784540 B 20221121; US 11942512 B2 20240326; US 2021367028 A1 20211125
DOCDB simple family (application)
EP 21173997 A 20210517; CN 202110541791 A 20210518; JP 2020090325 A 20200525; TW 110118723 A 20210524; US 202117241631 A 20210427