EP 3918599 B1 20230705 - MEMORY SYSTEM CAPABLE OF REDUCING THE READING TIME
Title (en)
MEMORY SYSTEM CAPABLE OF REDUCING THE READING TIME
Title (de)
ZUR REDUZIERUNG DER LESEZEIT FÄHIGES SPEICHERSYSTEM
Title (fr)
SYSTÈME DE MÉMOIRE CAPABLE DE RÉDUIRE LE TEMPS DE LECTURE
Publication
Application
Priority
CN 2019085219 W 20190430
Abstract (en)
[origin: US2020350027A1] A bias circuit includes a charging current reproduce unit, a cell current reproduce unit, a current comparator, and a bit line bias generator. The charging current reproduce unit generates a charging reference voltage according to a charging current flowing through a voltage bias transistor. The cell current reproduce unit generates a cell reference voltage according to a cell current flowing through a common source transistor. The current comparator includes a first current generator for generating a replica charging current according to the charging reference voltage, and a second current generator for generating a replica cell current according to the cell reference voltage. The bit line bias generator generates a bit line bias voltage to control a page buffer for charging a bit line according to a difference between the replica charging current and the replica cell current.
IPC 8 full level
G11C 16/24 (2006.01); G11C 7/12 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01)
CPC (source: CN EP KR US)
G11C 5/14 (2013.01 - CN KR); G11C 7/1057 (2013.01 - CN KR); G11C 7/12 (2013.01 - CN EP KR); G11C 16/24 (2013.01 - EP US); G11C 16/28 (2013.01 - EP KR US); G11C 16/30 (2013.01 - EP KR US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 10998059 B2 20210504; US 2020350027 A1 20201105; CN 110235200 A 20190913; CN 110235200 B 20200825; CN 111816226 A 20201023; CN 111816226 B 20210330; EP 3918599 A1 20211208; EP 3918599 A4 20220713; EP 3918599 B1 20230705; JP 2022528633 A 20220615; JP 7146114 B2 20221003; KR 102652215 B1 20240327; KR 20210131403 A 20211102; TW 202042222 A 20201116; TW I694461 B 20200521; US 11270777 B2 20220308; US 11670384 B2 20230606; US 2021183453 A1 20210617; US 2022157390 A1 20220519; WO 2020220274 A1 20201105
DOCDB simple family (application)
US 201916436926 A 20190611; CN 2019085219 W 20190430; CN 201980000787 A 20190430; CN 202010673428 A 20190430; EP 19927449 A 20190430; JP 2021557114 A 20190430; KR 20217030739 A 20190430; TW 108122101 A 20190625; US 202117187679 A 20210226; US 202217587998 A 20220128