EP 3938324 A1 20220119 - DOPED FUSED SILICA COMPONENT FOR USE IN A PLASMA-ASSISTED MANUFACTURING PROCESS AND METHOD FOR PRODUCING THE COMPONENT
Title (en)
DOPED FUSED SILICA COMPONENT FOR USE IN A PLASMA-ASSISTED MANUFACTURING PROCESS AND METHOD FOR PRODUCING THE COMPONENT
Title (de)
BAUTEIL AUS DOTIERTEM QUARZGLAS FÜR DEN EINSATZ IN EINEM PLASMA-UNTERSTÜTZTEN FERTIGUNGSPROZESS SOWIE VERFAHREN ZUR HERSTELLUNG DES BAUTEILS
Title (fr)
PIÈCE CONSTITUÉE DE VERRE DE SILICE DOPÉ DESTINÉE À ÊTRE UTILISÉE DANS UN PROCESSUS DE FABRICATION ASSISTÉ PAR PLASMA ET PROCÉDÉ POUR PRODUIRE LA PIÈCE
Publication
Application
Priority
- EP 19162613 A 20190313
- EP 2020055116 W 20200227
Abstract (en)
[origin: WO2020182479A1] A known component in doped fused silica for use in a plasma-assisted manufacturing process, especially in semiconductor fabrication, comprises at least one dopant capable of reacting with fluorine to form a fluoride compound, the fluoride compound having a boiling point higher than that of SiF4. To specify, on this basis, a doped fused silica component which when used in a plasma-assisted manufacturing process exhibits high dry-etch resistance and low particle formation and in particular a uniform etch ablation, a proposal made is that the doped fused silica should have a microhomogeneity that is defined (a) by a surface roughness with an Ra of less than 20 nm when the surface has undergone a dry-etch procedure specified in the description, and/or (b) by a dopant distribution having a lateral concentration profile in which maxima in the dopant concentration have a mean spacing of less than 30 µm from one another.
IPC 8 full level
C03B 19/06 (2006.01); C03C 3/06 (2006.01)
CPC (source: EP KR US)
C03B 19/066 (2013.01 - EP KR US); C03C 3/06 (2013.01 - EP KR US); C03B 2201/30 (2013.01 - EP KR); C03B 2201/32 (2013.01 - EP KR); C03B 2201/34 (2013.01 - EP KR); C03B 2201/40 (2013.01 - EP KR); C03B 2201/42 (2013.01 - EP KR); C03C 2201/12 (2013.01 - US); C03C 2201/30 (2013.01 - EP KR); C03C 2201/32 (2013.01 - EP KR); C03C 2201/34 (2013.01 - EP KR); C03C 2201/40 (2013.01 - EP KR); C03C 2201/42 (2013.01 - EP KR); C03C 2203/22 (2013.01 - EP KR); C03C 2203/30 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3708547 A1 20200916; CN 113508095 A 20211015; EP 3938324 A1 20220119; JP 2022524452 A 20220502; JP 7502323 B2 20240618; KR 20220002868 A 20220107; SG 11202109145T A 20210929; TW 202100476 A 20210101; US 2022153626 A1 20220519; WO 2020182479 A1 20200917
DOCDB simple family (application)
EP 19162613 A 20190313; CN 202080018357 A 20200227; EP 2020055116 W 20200227; EP 20706303 A 20200227; JP 2021554772 A 20200227; KR 20217029309 A 20200227; SG 11202109145T A 20200227; TW 109107926 A 20200311; US 202017438698 A 20200227