EP 3963640 A1 20220309 - METHOD OF PRODUCTION OF SILICON HETEROJUNCTION SOLAR CELLS WITH STABILIZATION STEP AND PRODUCTION LINE SECTION FOR THE STABILIZING STEP
Title (en)
METHOD OF PRODUCTION OF SILICON HETEROJUNCTION SOLAR CELLS WITH STABILIZATION STEP AND PRODUCTION LINE SECTION FOR THE STABILIZING STEP
Title (de)
HERSTELLUNGSVERFAHREN VON SILIZIUM-HETEROJUNCTION-SOLARZELLEN MIT STABILISIERUNGSSCHRITT UND FERTIGUNGSLINIENABSCHNITT FÜR DEN STABILISIERUNGSSCHRITT
Title (fr)
PROCÉDÉ DE FABRICATION DE CELLULES SOLAIRES À HÉTÉROJONCTION DE SILICIUM AVEC UNE ÉTAPE DE STABILISATION ET SECTION DE LIGNE DE FABRICATION POUR L'ÉTAPE DE STABILISATION
Publication
Application
Priority
- DE 102019111061 A 20190429
- DE 2020100353 W 20200429
Abstract (en)
[origin: WO2020221399A1] The present invention relates to a method of production of silicon heterojunction solar cells having at least one stabilization step, wherein the stabilization step is performed after amorphous silicon layers, and preferably also transparent layers or even metallic contact materials, have already been applied beforehand to crystalline silicon solar wafers. The problem addressed by the invention consists in finding an efficient stabilization step which permits high solar cell efficiencies. The problem is solved by a method of production of silicon heterojunction solar cells in which the stabilization step comprises heating the solar cell to temperatures above 200°C and exposing same to a light source, wherein the light source emits light in a wavelength range < 2500 nm and wherein a light dose output by the light source is in excess of 8000 Ws/m2.
IPC 8 full level
H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01)
CPC (source: EP US)
H01L 31/0747 (2013.01 - EP US); H01L 31/1864 (2013.01 - EP US); H01L 31/202 (2013.01 - US); H01L 31/208 (2013.01 - EP US); Y02E 10/50 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102019111061 A1 20201029; EP 3963640 A1 20220309; US 2022149225 A1 20220512; WO 2020221399 A1 20201105
DOCDB simple family (application)
DE 102019111061 A 20190429; DE 2020100353 W 20200429; EP 20726682 A 20200429; US 202017438685 A 20200429