EP 3969642 A1 20220323 - HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
Title (en)
HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
Title (de)
ABLAGERUNG VON GRUPPE-III/V-MATERIALIEN MIT HOHER WACHSTUMSRATE
Title (fr)
DÉPÔT À TAUX DE CROISSANCE ÉLEVÉ POUR MATÉRIAUX DU GROUPE III/V
Publication
Application
Priority
- US 201916412328 A 20190514
- US 2020032676 W 20200513
Abstract (en)
[origin: WO2020232123A1] Aspects of the disclosure relate to processes for epitaxial growth of III-V compound of (Al)GaInP material at high rates, such as about 8 μm/hr, 10 μm/hr, 20 μm/hr, 30 μm/hr, 40 μm/hr, and 8-120 μm/hr deposition rates,. The high growth-rate deposited (Al)InGaP materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a chemical vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium aluminum indium phosphide, gallium indium phosphide, derivatives thereof, alloys thereof, or combinations thereof.
IPC 8 full level
C30B 19/04 (2006.01); C30B 19/12 (2006.01); C30B 29/40 (2006.01)
CPC (source: EP)
C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 29/40 (2013.01); H01L 21/02395 (2013.01); H01L 21/02463 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/0262 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2020232123 A1 20201119; EP 3969642 A1 20220323; EP 3969642 A4 20230927
DOCDB simple family (application)
US 2020032676 W 20200513; EP 20804988 A 20200513