Title (en)

DEVICE FOR CONTROLLING TRAPPED IONS AND METHOD OF MANUFACTURING THE SAME

Title (de)

VORRICHTUNG ZUR KONTROLLE VON EINGEFANGENEN IONEN UND VERFAHREN ZU DEREN HERSTELLUNG

Title (fr)

DISPOSITIF DE CONTRÔLE D'IONS PIÉGÉS ET SON PROCÉDÉ DE FABRICATION

Publication

EP 3979298 A1 20220406 (EN)

Application

EP 20199325 A 20200930

Priority

EP 20199325 A 20200930

Abstract (en)

A device for controlling trapped ions includes a first semiconductor substrate. A second semiconductor substrate is disposed over the first semiconductor substrate. At least one ion trap is configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate. A spacer is disposed between the first semiconductor substrate and the second semiconductor substrate, the spacer comprising an electrical interconnect which electrically connects a first metal layer structure of the first semiconductor substrate to a second metal layer structure of the second semiconductor substrate.

IPC 8 full level

H01J 49/00 (2006.01); H01J 49/42 (2006.01)

CPC (source: EP US)

H01J 49/0018 (2013.01 - EP); H01J 49/4225 (2013.01 - EP); H01L 24/03 (2013.01 - US); H01L 24/05 (2013.01 - US); H01L 2224/0212 (2013.01 - US); H01L 2224/0239 (2013.01 - US); H01L 2224/03552 (2013.01 - US)

Citation (search report)

• [IY] EP 2372745 A2 20111005 - MICROSAIC SYSTEMS PLC [GB]
• [A] EP 1203397 A1 20020508 - DRAPER LAB CHARLES S [US]
• [Y] CN 106024575 B 20180116
• [Y] US 2019066993 A1 20190228 - RAMSEY JOHN MICHAEL [US], et al

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 3979298 A1 20220406; CN 114358297 A 20220415; US 11984416 B2 20240514; US 2022102301 A1 20220331; US 2024213193 A1 20240627

DOCDB simple family (application)

EP 20199325 A 20200930; CN 202111157175 A 20210930; US 202117488388 A 20210929; US 202418594703 A 20240304