EP 3979330 A1 20220406 - SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A WELL REGION
Title (en)
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A WELL REGION
Title (de)
SILICIUMCARBIDVORRICHTUNG MIT TRANSISTORZELLE UND KLEMMBEREICHEN IN EINEM WANNENBEREICH
Title (fr)
DISPOSITIF AU CARBURE DE SILICIUM COMPORTANT UNE CELLULE DE TRANSISTOR ET DES RÉGIONS DE SERRAGE DANS UNE RÉGION DE PUITS
Publication
Application
Priority
EP 20199315 A 20200930
Abstract (en)
A transistor cell (TC) includes a gate electrode (155) and a source region (110) of a first conductivity type. A drain/drift region (130) is formed in a silicon carbide body (100). A buried region (425) of the second conductivity type and the drain/drift region (130) form a pn junction. The buried region (425) and a well region (410) form a unipolar junction. A mean net dopant density N<sub>2</sub> of the buried region (425) is higher than a mean net dopant density N<sub>1</sub> of the well region (410). A first clamp region (411) of the first conductivity type extends into the well region (410). A first low-resistive ohmic path (901) electrically connects the first clamp region (411) and the gate electrode (155). A second clamp region (412) of the first conductivity type extends into the well region (410). A second low-resistive ohmic path (902) electrically connects the second clamp region (412) and the source region (110).
IPC 8 full level
H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/739 (2006.01)
CPC (source: EP US)
H01L 27/0255 (2013.01 - EP); H01L 27/0629 (2013.01 - EP); H01L 29/0626 (2013.01 - US); H01L 29/1095 (2013.01 - US); H01L 29/1608 (2013.01 - US); H01L 29/7804 (2013.01 - EP); H01L 29/7808 (2013.01 - EP); H01L 29/7813 (2013.01 - EP US); B82Y 10/00 (2013.01 - EP); H01L 29/1608 (2013.01 - EP); H01L 29/7395 (2013.01 - EP); H01L 29/7397 (2013.01 - EP)
Citation (search report)
- [YA] JP S648674 A 19890112 - ROHM CO LTD
- [Y] US 2020161466 A1 20200521 - YEN CHENG-TYNG [TW], et al
- [Y] US 2017194438 A1 20170706 - KUMAGAI NAOKI [JP], et al
- [YA] JP H0794730 A 19950407 - HITACHI LTD
- [A] JP S54112179 A 19790901 - SONY CORP
- [A] JP S62186565 A 19870814 - MITSUBISHI ELECTRIC CORP
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3979330 A1 20220406; CN 114361238 A 20220415; US 2022102487 A1 20220331
DOCDB simple family (application)
EP 20199315 A 20200930; CN 202111165369 A 20210930; US 202117489365 A 20210929