EP 3983581 A1 20220420 - METHOD FOR PRODUCING SEMICONDUCTOR WAFERS FROM SILICON
Title (en)
METHOD FOR PRODUCING SEMICONDUCTOR WAFERS FROM SILICON
Title (de)
VERFAHREN ZUR HERSTELLUNG VON HALBLEITERSCHEIBEN AUS SILIZIUM
Title (fr)
PROCÉDÉ POUR LA FABRICATION DE DISQUES SEMI-CONDUCTEURS EN SILICIUM
Publication
Application
Priority
- DE 102019208670 A 20190614
- EP 2020065179 W 20200602
Abstract (en)
[origin: CN112080791A] The invention relates to a method for producing semiconductor wafers from single crystal silicon from silicon with a concentration of oxygen greater than 2*10<17> at/cm<3> and with a concentration ofpinholes less than 1.0*10<-5> 1/cm<3> with a diameter greater than 100 microns and a carbon concentration of less than 5,5 x 1014 at/cm<3>, preferably less than 4*10<14> at/cm<3> and an iron concentration of less than 5.0*10<9> at/cm<3>, preferably less than 1.0*10<9> at/cm<3> and a COP concentration of less than 1,000 defects/cm<3>and an LPIT concentration of less than 1 defect/cm<2> and a crystal diameter of greater than 200 mm, preferably greater than 300 mm.
IPC 8 full level
C30B 15/20 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01)
CPC (source: CN EP KR US)
C30B 15/00 (2013.01 - CN); C30B 15/20 (2013.01 - CN EP KR US); C30B 29/06 (2013.01 - CN EP KR US); C30B 35/007 (2013.01 - EP KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102019208670 A1 20201217; CN 112080791 A 20201215; CN 112080791 B 20220729; CN 113966414 A 20220121; CN 113966414 B 20231003; EP 3983581 A1 20220420; EP 3983581 B1 20240501; FI 3983581 T3 20240730; JP 2022536520 A 20220817; JP 2023100916 A 20230719; JP 7354298 B2 20231002; KR 20220017492 A 20220211; TW 202045780 A 20201216; TW I746000 B 20211111; US 2022356601 A1 20221110; WO 2020249422 A1 20201217
DOCDB simple family (application)
DE 102019208670 A 20190614; CN 202010528927 A 20200611; CN 202080043659 A 20200602; EP 2020065179 W 20200602; EP 20730021 A 20200602; FI 20730021 T 20200602; JP 2021573889 A 20200602; JP 2023077934 A 20230510; KR 20227000514 A 20200602; TW 109119435 A 20200610; US 202017619064 A 20200602