EP 3993061 A1 20220504 - SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
Title (en)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
Title (de)
HALBLEITERBAUELEMENT UND HALBLEITERMODUL
Title (fr)
DISPOSITIF SEMICONDUCTEUR ET MODULE SEMICONDUCTEUR
Publication
Application
Priority
JP 2020183559 A 20201102
Abstract (en)
According to one embodiment, a semiconductor device includes an emitter electrode (51), a collector electrode (52), an emitter-side trench gate electrode (53) and a collector-side trench gate electrode (54). It furthermore includes a semiconductor member, and first and second insulating members. The semiconductor member is located between the emitter and collector electrodes, and includes a first (n-type) semiconductor drift region (11), a second (p-type) semiconductor region (12) between the first semiconductor region and the first electrode, a third (n-type) semiconductor region (13) between the second semiconductor region and the first electrode, a fourth (p-type) semiconductor region (14) between the second semiconductor region and the first electrode, a fifth (p-type) semiconductor region (15) between the first semiconductor region and the second electrode, a sixth (n-type) semiconductor region (16) between the fifth semiconductor region and the second electrode, and a seventh (p-type) semiconductor region (17) between the fifth semiconductor region and the second electrode. The p-type body contact regions at the emitter (14) and at the collector side (17) may be different by a factor of 20 as far as their doping levels or their volumes are concerned.
IPC 8 full level
H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01)
CPC (source: CN EP US)
H01L 29/0603 (2013.01 - CN); H01L 29/0607 (2013.01 - US); H01L 29/0834 (2013.01 - EP); H01L 29/4232 (2013.01 - EP); H01L 29/7397 (2013.01 - CN EP US)
Citation (search report)
- [XI] US 2020098903 A1 20200326 - SATOH KATSUMI [JP]
- [XI] US 2020091323 A1 20200319 - IWAKAJI YOKO [JP], et al
- [I] US 6323509 B1 20011127 - KUSUNOKI SHIGERU [JP]
- [A] US 2018083129 A1 20180322 - KITAGAWA MITSUHIKO [JP]
- [A] US 2015162429 A1 20150611 - HASHIMOTO TAKAYUKI [JP], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 3993061 A1 20220504; CN 114447112 A 20220506; JP 2022073525 A 20220517; US 11784246 B2 20231010; US 2022140120 A1 20220505
DOCDB simple family (application)
EP 21192855 A 20210824; CN 202110971529 A 20210824; JP 2020183559 A 20201102; US 202117411275 A 20210825