Global Patent Index - EP 4000095 A1

EP 4000095 A1 20220525 - IMAGE SENSOR

Title (en)

IMAGE SENSOR

Title (de)

BILDSENSOR

Title (fr)

CAPTEUR D'IMAGES

Publication

EP 4000095 A1 20220525 (FR)

Application

EP 20736358 A 20200709

Priority

  • FR 1908017 A 20190716
  • EP 2020069315 W 20200709

Abstract (en)

[origin: WO2021008980A1] The present invention concerns a method for manufacturing an optoelectronic device comprising an optical sensor with organic photodiodes capable of capturing a radiation. The optical sensor covers an electronic circuit (101) with MOS transistors (102). The method comprises forming, on the optical sensor, on the side of the optical sensor opposite the electronic circuit, a first layer (201) that is transparent to said radiation, the first layer having a flat face on the side opposite the optical sensor; and forming a second layer (301) on said face, the second layer being oxygen-tight and watertight.

IPC 8 full level

H01L 27/30 (2006.01); H01L 51/44 (2006.01)

CPC (source: CN EP KR US)

H10K 30/88 (2023.02 - CN EP KR US); H10K 39/32 (2023.02 - CN EP KR US); H10K 30/10 (2023.02 - CN EP KR US); H10K 30/20 (2023.02 - US); Y02E 10/549 (2013.01 - EP KR)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

FR 3098996 A1 20210122; CN 114402452 A 20220426; EP 4000095 A1 20220525; JP 2023504960 A 20230208; KR 20220031926 A 20220314; TW 202118040 A 20210501; US 2022246875 A1 20220804; WO 2021008980 A1 20210121

DOCDB simple family (application)

FR 1908017 A 20190716; CN 202080065150 A 20200709; EP 2020069315 W 20200709; EP 20736358 A 20200709; JP 2022502564 A 20200709; KR 20227004317 A 20200709; TW 109123297 A 20200710; US 202017625985 A 20200709