EP 4016639 A1 20220622 - CONDENSED SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONTENT
Title (en)
CONDENSED SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONTENT
Title (de)
KONDENSIERTE SOURCE- ODER DRAIN-STRUKTUREN MIT HOHEM GERMANIUMGEHALT
Title (fr)
STRUCTURES CONDENSÉES DE SOURCE OU DE DRAIN À HAUTE TENEUR EN GERMANIUM
Publication
Application
Priority
US 202017129860 A 20201221
Abstract (en)
Integrated circuit structures having condensed source or drain structures (152) with high germanium content are described. In an example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires (108). A gate stack (110) is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure (152) is at a first end of the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure (152) is at a second end of the vertical arrangement of horizontal nanowires. Each of the first and second epitaxial source or drain structures includes silicon and germanium, the atomic concentration of germanium having a gradient between a core and the periphery of the epitaxial source or drain structure. The gradient is achieved using a high temperature anneal of SiGe source or drain structures in an oxidizing environment and the resulting Ge condensation.
IPC 8 full level
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); B82Y 10/00 (2011.01); H01L 29/04 (2006.01)
CPC (source: CN EP US)
B82Y 10/00 (2013.01 - CN); H01L 29/0673 (2013.01 - EP US); H01L 29/0847 (2013.01 - EP); H01L 29/41775 (2013.01 - CN); H01L 29/41791 (2013.01 - CN); H01L 29/42392 (2013.01 - EP); H01L 29/66439 (2013.01 - CN EP); H01L 29/66545 (2013.01 - CN); H01L 29/6656 (2013.01 - US); H01L 29/66795 (2013.01 - CN EP); H01L 29/775 (2013.01 - CN EP); H01L 29/7848 (2013.01 - EP US); H01L 29/785 (2013.01 - CN); H01L 29/78696 (2013.01 - EP); B82Y 10/00 (2013.01 - EP); H01L 29/04 (2013.01 - EP); H01L 29/161 (2013.01 - EP); H01L 29/165 (2013.01 - EP); H01L 29/66545 (2013.01 - EP)
Citation (search report)
- [X] US 2019058053 A1 20190221 - DEWEY GILBERT [US], et al
- [I] US 2014001441 A1 20140102 - KIM SEIYON [US], et al
- [A] US 2019207016 A1 20190704 - REBOH SHAY [FR], et al
- [A] US 8623728 B2 20140107 - CHANG CHIH-HAO [TW], et al
- [A] US 2016365452 A1 20161215 - TUNG YU-CHENG [TW], et al
- [A] US 2018145176 A1 20180524 - WEI HUAN-SHENG [TW], et al
- [A] US 2016293717 A1 20161006 - KIM JIN BUM [KR], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 4016639 A1 20220622; CN 114649209 A 20220621; US 2022199773 A1 20220623
DOCDB simple family (application)
EP 21198474 A 20210923; CN 202111376006 A 20211119; US 202017129860 A 20201221