EP 4016646 A1 20220622 - POWER SEMICONDUCTOR DEVICE AND PRODUCTION METHOD
Title (en)
POWER SEMICONDUCTOR DEVICE AND PRODUCTION METHOD
Title (de)
LEISTUNGSHALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN
Title (fr)
DISPOSITIF À SEMI-CONDUCTEUR DE PUISSANCE ET PROCÉDÉ DE PRODUCTION
Publication
Application
Priority
EP 20216094 A 20201221
Abstract (en)
In at least one embodiment, the power semiconductor device (1) comprises- a first main electrode (21),- a second main electrode (22),- a semiconductor layer stack (3) and a gate electrode layer (4) between the electrodes (21, 22), wherein- the semiconductor layer stack (3) comprises a plurality of pillars (30) traversing the gate electrode layer (4),- the whole semiconductor layer stack (3) is of the same conductivity type,- each one of the pillars (30) comprises a top region (31) with a first doping concentration,- at sides of the top regions (31) facing away from the first main electrode (21), each of the pillars (30) comprises a channel region (32) with a second doping concentration, and- the first doping concentration exceeds the second doping concentration by at least a factor of 10.
IPC 8 full level
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01)
CPC (source: EP)
H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7828 (2013.01); H01L 29/66666 (2013.01)
Citation (applicant)
- US 2016351391 A1 20161201 - BORG MATTIAS BENGT [CH], et al
- US 2011124169 A1 20110526 - YE ZHIYUAN [US], et al
Citation (search report)
- [XYI] US 5323040 A 19940621 - BALIGA BANTVAL J [US]
- [XAI] US 10056289 B1 20180821 - CHENG KANGGUO [US], et al
- [X] WO 0111690 A1 20010215 - ROCKWELL SCIENCE CENTER LLC [US]
- [Y] WO 2020114666 A1 20200611 - ABB SCHWEIZ AG [CH]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DOCDB simple family (application)
EP 20216094 A 20201221; CN 202180085693 A 20211220