EP 4022663 A1 20220706 - ELECTRON SOURCE FOR GENERATING AN ELECTRON BEAM
Title (en)
ELECTRON SOURCE FOR GENERATING AN ELECTRON BEAM
Title (de)
ELEKTRONENQUELLE ZUM ERZEUGEN EINES ELEKTRONENSTRAHLS
Title (fr)
SOURCE D'ÉLECTRONS DESTINÉE À GÉNÉRER UN FAISCEAU D'ÉLECTRONS
Publication
Application
Priority
- DE 102019123248 A 20190829
- EP 2020071704 W 20200731
Abstract (en)
[origin: WO2021037481A1] The invention relates to an electron source (2) for generating an electron beam (8), comprising a cathode (1) and an anode (4) in the form of a graphene layer (6, 12) which is epitaxially grown with a silicon carbide substrate (5). The invention is suitable for the monolithic production of a miniaturized source of a focused high-energy electron beam, including for the use thereof as an on-chip X-ray source. All components can be produced from or on a single silicon carbide chip.
IPC 8 full level
H01J 1/304 (2006.01); H01J 1/316 (2006.01); H01J 1/38 (2006.01); H01J 3/02 (2006.01); H01J 35/06 (2006.01)
CPC (source: CN EP US)
H01J 1/3046 (2013.01 - EP); H01J 1/316 (2013.01 - EP); H01J 3/021 (2013.01 - CN); H01J 3/027 (2013.01 - EP); H01J 35/02 (2013.01 - CN); H01J 35/064 (2019.04 - US); H01J 35/065 (2013.01 - EP); H01J 35/066 (2019.04 - US); H01J 1/38 (2013.01 - EP); H01J 2201/30453 (2013.01 - EP); H01J 2201/319 (2013.01 - EP); H01J 2235/062 (2013.01 - EP)
Citation (search report)
See references of WO 2021037481A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2021037481 A1 20210304; CN 114521282 A 20220520; DE 102019123248 A1 20210304; EP 4022663 A1 20220706; US 2022406556 A1 20221222
DOCDB simple family (application)
EP 2020071704 W 20200731; CN 202080067855 A 20200731; DE 102019123248 A 20190829; EP 20751508 A 20200731; US 202017638891 A 20200731